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SK hynix has been broadening its collaboration with its strategic partner Dell Technologies (Dell). Following Dell Technologies World 2026, held in May in Las Vegas, US, SK hynix participated in the Dell Technologies Forum 2026 (DTF), held on Aug 25th at COEX in Seoul. During the latest event, the two companies reaffirmed their strong trust, while showcasing a wide array of next-generation AI memory solutions.<\/p>\n
Dell hosts its Technologies Forum across major cities worldwide to strengthen collaboration with its key business partners in each region. As a core partner of Dell,
\nSK hynix has continuously participated in the forum held in Seoul since 2023. This year in particular, SK hynix presented a product portfolio spanning the entire memory hierarchy, targeting an AI infrastructure market that is expanding rapidly amid the swift advancement of AI technology. In doing so, the company once again proved its technological leadership in the AI era.<\/p>\n
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\u25b2 Visitors explore SK hynix\u2019s exhibition booth<\/p><\/div><\/a><\/div>\n<\/div>\n
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\u25b2 Visitors explore SK hynix\u2019s exhibition booth<\/p><\/div><\/a><\/div>\n<\/div>\n<\/div>\n
SK hynix put considerable effort into this exhibition\u2019s design to visually express its identity as a full-stack AI memory creator. The first thing visitors saw upon entering the booth was the front media signage, which drew their attention with media art highlighting the essential role AI memory plays in bringing AI into everyday life. The back wall was decorated with graphics conveying SK hynix\u2019s vision and direction to build efficient, reliable AI infrastructure through its AI memory solutions, reinforcing a cohesive message throughout the booth.<\/p>\n
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\u25b2 Visitors examine product information on the display screen<\/p>\n
Above all, visitors showed strong interest in the \u201cserver rack\u201d exhibition space specially prepared for this year\u2019s DTF. This interactive experience featured a touchscreen mounted on the front of a structure shaped like an AI server rack, The product details appear on the touchscreen when the structure was touched, it allowed visitors to intuitively grasp the role and importance of SK hynix products within an actual server system.<\/p>\n
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\u25b2 The internal structure of the Scalable Data Server and the SK hynix products positioned in each area<\/p>\n
The eSSD products featured in the Scalable Data Server includ the PEB210 E1.S, which supports Direct Liquid Cooling (DLC); the PS1110 E3.S, which delivers high capacity and low power consumption in the NVMe*<\/span> E3.S form factor; and the PS1101 E3.S, SK hynix\u2019s first QLC*<\/span>-based eSSD. The Server DRAM lineup was displayed side by side: the 256GB 3DS*<\/span> RDIMM*<\/span>, which achieves the industry\u2019s largest capacity; the 128GB MRDIMM*<\/span>, optimized for high-performance computing environments with its high bandwidth; and the 64GB RDIMM, which delivers fast speeds and high power efficiency, built on the world\u2019s first 10-nanometer (nm) class sixth-generation (1c)*<\/span> process technology. Visitors could also find detailed information on the second-generation \u25b2 Information and introduction videos on the HBM product lineup<\/p>\n The products featured in the Hyper-Speed AI Server include the HBM*<\/span> lineup \u2014 HBM3E, HBM4, and HBM4E \u2014 along with the 192GB SOCAMM2*<\/span>, which improves power and space efficiency with its new form factor.<\/p>\n \u25b2 The \u2018Product & System\u2019 exhibition space, where visitors could explore SK hynix\u2019s diverse AI memory products<\/p><\/div><\/a> \u25b2 The \u2018Product & System\u2019 exhibition space, where visitors could explore SK hynix\u2019s diverse AI memory products<\/p><\/div><\/a> Above the front media signage, the \u201cProduct & System\u201d exhibition space was organized into four zones: HBM, AI DRAM, AI NAND, and AI Reality. In the \u201cHBM\u201d zone on the far left, an actual HBM4 wafer was displayed alongside HBM4 and HBM4E products, drawing visitors in.<\/p>\n Next to it, the \u201cAI DRAM\u201d and \u201cAI NAND\u201d zones were arranged side by side, allowing visitors to view actual units and detailed specifications of key AI memory products backed by SK hynix\u2019s partnership with Dell Technologies. The \u201cAI DRAM\u201d zone featured a versatile DRAM lineup optimized for AI server and PC environments, including SOCAMM2, \u25b2 Dell's senior executives visit SK hynix's exhibition booth<\/p><\/div><\/a> \u25b2 Visitors examine Dell\u2019s R770 server system and SK hynix\u2019s certified products<\/p><\/div><\/a> The \u201cAI Reality\u201d zone was placed on the far right of the display stand. Here, next to Dell\u2019s R770 server system, actual units of SK hynix\u2019s certified products installed in it \u2014 the 6400MT\/s DDR5 RDIMM and the PS1010 E3.S \u2014 were displayed side by side, allowing visitors to see firsthand how SK hynix\u2019s products are integrated into an actual Dell server.<\/p>\n \u25b2 Youngpyo Joo, Vice President andhead of the System Architecture department, delivers the keynote<\/p>\n This year\u2019s event carried extra significance, as SK hynix delivered a keynote for the first time at a DTF held in Seoul. Taking the stage as a keynote speaker, Vice President Joo explained how next-generation memory solutions are completing the AI era, under the theme \u201cThe Invisible Engine: The Technology That Completes the AI Era.\u201d<\/p>\n \u201cMemory technology may not be visible on the surface, but it is the core driving force of the AI era, determining AI performance across every domain from storage to systems,\u201d he emphasized. \u201cSK hynix is steadily advancing its technological innovation so that AI can realize its full potential.\u201d<\/p>\n \u25b2 Technical Leader Cheolhoon Yang of NAND Product Planning delivers a presentation<\/p><\/div><\/a>
\nCMM (CXL*<\/span> Memory Module)-DDR5*<\/span>, another product featured in the Scalable Data Server.<\/p>\n* <\/span>NVMe (Non-Volatile Memory Express): A communication protocol for non-volatile memory based on the PCIe interface. Compared to the conventional SATA interface, it is optimized for ultra-high-speed,
\nhigh-capacity data processing.
\n*<\/span> QLC: NAND flash memory is classified by the number of bits stored per cell \u2014 SLC (Single Level Cell, 1 bit),
\nMLC (Multi Level Cell, 2 bits), TLC (Triple Level Cell, 3 bits), and QLC (Quadruple Level Cell, 4 bits). As storage capacity increases, more data can be stored in the same area.
\n*<\/span> 3DS (3D Stacked Memory): High-performance memory that vertically connects two or more DRAM chips using TSV (Through-Silicon Via).
\n*<\/span> RDIMM (Registered Dual In-line Memory Module): A server memory module composed of multiple DRAM chips.
\n*<\/span> MRDIMM (Multiplexed Rank Dual In-line Memory Module): A product with significantly enhanced speed achieved by operating two ranks \u2014 the module\u2019s basic operating units \u2014 simultaneously.
\n*<\/span> The 10-nanometer (nm) class process technology has progressed sequentially through generations 1x, 1y, 1z, 1a, 1b, and 1c (sixth generation).
\n*<\/span> CXL (Compute Express Link): An interface technology that efficiently connects memory, processors, and other components within a system to expand the limits of bandwidth and capacity.
\n*<\/span> CMM-DDR5: A product that expands system capacity by 50% and increases bandwidth by 30% compared to conventional DDR5 modules, achieving a data processing capability of 36GB per second.<\/div>\n![\"\"](\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/08\/25185621\/SK%ED%95%98%EC%9D%B4%EB%8B%89%EC%8A%A4-%E2%80%98DTF-2026%EC%84%9C-AI-%EC%9D%B8%ED%94%84%EB%9D%BC%EC%97%90-%EC%B5%9C%EC%A0%81%ED%99%94%EB%90%9C-%EB%A9%94%EB%AA%A8%EB%A6%AC-%EC%86%94%EB%A3%A8%EC%85%98-%EC%B4%9D%EB%A7%9D%EB%9D%BC_%EA%B8%B0%ED%83%80_%EC%9D%B4%EB%AF%B8%EC%A7%80_TECHAI_2026_05.jpg\")
<\/p>\n*<\/span> HBM (High Bandwidth Memory): A high-value, high-performance product that vertically connects multiple DRAM chips to increase capacity and dramatically enhance data processing speed. HBM has been developed in sequence: 1st generation (HBM), 2nd generation (HBM2), 3rd generation (HBM2E), 4th generation (HBM3), 5th generation (HBM3E), and 6th generation (HBM4).
\n*<\/span> SOCAMM2 (Small Outline Compression Attached Memory Module): A memory module form factor based on low-power DRAM, specialized and optimized for AI servers. SK hynix has announced the mass production of its 192GB SOCAMM2 built on 1cnm LPDDR5X.<\/div>\n\n\n\n\t![\"\"](\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/08\/25185623\/SK%ED%95%98%EC%9D%B4%EB%8B%89%EC%8A%A4-%E2%80%98DTF-2026%EC%84%9C-AI-%EC%9D%B8%ED%94%84%EB%9D%BC%EC%97%90-%EC%B5%9C%EC%A0%81%ED%99%94%EB%90%9C-%EB%A9%94%EB%AA%A8%EB%A6%AC-%EC%86%94%EB%A3%A8%EC%85%98-%EC%B4%9D%EB%A7%9D%EB%9D%BC_%EA%B8%B0%ED%83%80_%EC%9D%B4%EB%AF%B8%EC%A7%80_TECHAI_2026_06.jpg\")
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<\/div><\/div>\n<\/div>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>\n<\/p>\n
\n3DS RDIMM, RDIMM, CSODIMM*<\/span>, LPCAMM2*<\/span>, LPDDR*<\/span>5X, and GDDR7. The \u201cAI NAND\u201d zone showcased a broad portfolio of eSSDs and cSSDs, led by SK hynix\u2019s first QLC eSSD (PS1101) and its first QLC cSSD (PQC21), including the PS1101 E3.S, PEB210 E1.S,
\nPEB210 M.2, PCB01, PVF01, PQF02A\/PQF02, and PQC21.<\/p>\n*<\/span> CSODIMM (Compression Attached Small Outline DIMM): A next-generation memory module with a thinner, more compact form factor than conventional SODIMM, designed to enable high capacity in AI PCs and high-performance laptops.
\n*<\/span> LPCAMM2 (Low-Power Compression Attached Memory Module): An LPDDR5X-based module that delivers the performance of two conventional DDR5-based SODIMMs (modules for laptops and small PCs) while providing space savings along with low power consumption and high performance.
\n*<\/span> LPDDR: The latest mobile DRAM product with low-power operating characteristics. The name is prefixed with LP (Low Power), and it has been developed in sequence: LPDDR1, 2, 3, 4, 4X, 5, 5X, and 6.<\/div>\n\n\n\n\t![\"\"](\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/08\/25185628\/SK%ED%95%98%EC%9D%B4%EB%8B%89%EC%8A%A4-%E2%80%98DTF-2026%EC%84%9C-AI-%EC%9D%B8%ED%94%84%EB%9D%BC%EC%97%90-%EC%B5%9C%EC%A0%81%ED%99%94%EB%90%9C-%EB%A9%94%EB%AA%A8%EB%A6%AC-%EC%86%94%EB%A3%A8%EC%85%98-%EC%B4%9D%EB%A7%9D%EB%9D%BC_%EA%B8%B0%ED%83%80_%EC%9D%B4%EB%AF%B8%EC%A7%80_TECHAI_2026_07_1.jpg\")
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<\/div><\/div>\n<\/div>\n<\/div>\n<\/div><\/div><\/div><\/div><\/div>\n<\/p>\n<\/div>\n\n\n<\/div>\n\u201cMemory Completes the AI Era\u201d \u2014 Presenting the Direction of Technological Innovation to Realize AI\u2019s Potential<\/h3>\n
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