{"id":1310,"date":"2025-06-05T06:00:00","date_gmt":"2025-06-05T06:00:00","guid":{"rendered":"http:\/\/localhost:8080\/sk-hynix-showcases-hbm4-next-gen-ai-memory-at-computex-taipei-2025\/"},"modified":"2026-07-29T14:53:49","modified_gmt":"2026-07-29T05:53:49","slug":"sk-hynix-showcases-hbm4-next-gen-ai-memory-at-computex-taipei-2025","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/sk-hynix-showcases-hbm4-next-gen-ai-memory-at-computex-taipei-2025\/","title":{"rendered":"SK hynix Showcases HBM4 & Next-Gen AI Memory at COMPUTEX Taipei 2025"},"content":{"rendered":"
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SK hynix presented a wide range of leading memory products for AI servers, PCs, and mobile devices at COMPUTEX Taipei 2025 from May 20\u201323.<\/p>\n

As one of Asia\u2019s leading IT exhibitions, COMPUTEX Taipei brings together global tech companies to showcase their latest technologies and solutions. It also serves as a platform for sharing innovations and emerging trends in key industries, including AI and data centers. Held under the theme \u201cAI Next,\u201d this year\u2019s show featured around 1,400 companies operating booths covering AI, robotics, next-generation technologies, and future mobility.<\/p>\n

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\u25b2 SK hynix\u2019s booth at COMPUTEX Taipei 2025<\/p><\/div><\/a>

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\u25b2 The company displayed various memory solutions from its portfolio<\/p><\/div><\/a>

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At the exhibition, SK hynix presented groundbreaking products under the slogan \u201cMemory, Powering AI and Tomorrow\u201d at a booth featuring four sections: HBM for AI, Data Centers, Mobile\/PC, and Ethics & ESG, highlighting its diverse lineup of AI memory solutions.<\/p>\n

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\u25b2 The HBM for AI section<\/p><\/div><\/a>

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\u25b2 The 12-layer HBM4 and 12-layer HBM3E on display<\/p><\/div><\/a>

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\u25b2 SK hynix\u2019s 36 GB 12-layer HBM3E, shown with NVIDIA\u2019s GB200 GPU module for AI servers<\/p><\/div><\/a>

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In the HBM for AI section, SK hynix showcased its latest HBM solutions, including the 12-layer HBM4 and 12-layer HBM3E. HBM4 \u2014 currently the industry\u2019s fastest HBM with a speed of 2 terabytes per second (TB\/s) \u2014 is being developed with enhanced base die performance to improve connectivity between the HBM stack and logic chips, while also reducing power consumption. In March 2025, SK hynix became the first in the industry to supply 12-layer HBM4 samples to major customers<\/a>. The product is slated for mass production in the second half of this year. Furthermore, the company unveiled a roadmap for its 16-layer HBM4, targeted for launch in 2026.<\/p>\n

In addition, SK hynix presented its 36 GB 12-layer HBM3E, installed in NVIDIA\u2019s AI server GPU module GB200.<\/p>\n

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\u25b2 The Data Center section at SK hynix\u2019s booth<\/p><\/div><\/a>

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\u25b2 The company\u2019s high-performance server DIMM portfolio<\/p><\/div><\/a>

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\u25b2 SK hynix\u2019s server storage lineup, including PEB110<\/p><\/div><\/a>

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\u25b2 A selection of Solidigm storage solutions on display<\/p><\/div><\/a>

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In the Data Center section, the company introduced server DRAM modules and eSSD products that maximize AI server performance while reducing power consumption.<\/p>\n

The server DRAM lineup included RDIMM* <\/sup> products with 64 GB to 256 GB capacities, equipped with DRAM which can reach speeds of up to 8 gigabit per second (Gbps); MRDIMM* <\/sup> modules with 96 GB to 256 GB capacities featuring 12.8 Gbps-class DRAM; and a 128 GB SOCAMM* <\/sup> module built with 7.5 Gbps-class LPDDR5X* <\/sup>. Notably, the company\u2019s DDR5-based high-performance modules \u2014 developed using the 1c node* <\/sup>, the sixth generation of the 10 nm process technology \u2014 received significant attention from attendees.<\/p>\n

* <\/sup>Registered Dual In-line Memory Module (RDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate.
\n* <\/sup>Multiplexed Rank Dual In-line Memory Module (MRDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate. Speed is enhanced by operating two ranks\u2014the basic operating units of the module\u2014simultaneously.
\n* <\/sup>Small Outline Compression Attached Memory Module (SOCAMM): Low-power DRAM-based memory module tailored for AI servers.
\n* <\/sup>LPDDR5X: DRAM used in mobile products, such as smartphones, tablets and laptops, featuring low-voltage operation to minimize power consumption. The LPDDR standard has been developed in the order of LPDDR1, 2, 3, 4, 4X, 5, and 5X, with LPDDR5X representing the seventh-generation LPDDR product.
\n* <\/sup>10 nm DRAM process technology has progressed through six generations: 1x, 1y, 1z, 1a, 1b, and 1c. In August 2024, SK hynix became the first in the world to successfully develop 1c process technology.<\/p>\n

In the eSSD zone, SK hynix presented storage solutions which offered ultra-high capacities of up to 61 TB. In particular, the PCIe* <\/sup> Gen5 PEB110, based on 238-layer 4D NAND, and the QLC* <\/sup>-based 61 TB PS1012, deliver optimal performance for AI data centers.<\/p>\n

* <\/sup>Peripheral Component Interconnect express (PCIe): A high-speed input\/output interface with a serial structure used on the main board of a digital device.
\n* <\/sup>Quad-level cell (QLC):\u00a0A type of memory cell used in NAND flash that stores four bits of data in a single cell. NAND flash is categorized as single-level cell (SLC), multi-level cell (MLC), triple-level cell (TLC), QLC, and penta-level cell (PLC) depending on how many data bits can be stored in one cell. As the amount of information storage increases, more data can be stored in the same volume.<\/p>\n

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Visitors to the Mobile\/PC section could check out DRAM and NAND products optimized for on-device AI. The company\u2019s displayed mobile device solutions included LPDDR5X, which can reach speeds of up to 10.7 Gbps, and UFS 4.1 storage built on 238-layer 4D NAND. For PCs, the company presented various solutions including CSODIMM* <\/sup> based on 1c DDR5 DRAM; LPCAMM2* <\/sup>, featuring multiple LPDDR5X chips in modular form; the high-performance PCB01 SSD for AI PCs; and GDDR7, the world\u2019s fastest graphics DRAM with speeds of up to 28 Gbps per chip.<\/p>\n

* <\/sup>Compression SODIMM\u00a0(CSODIMM):\u00a0A newly developed form factor based on SODIMM, an ultra-compact module commonly used in PCs. CSODIMM enables higher performance and density compared to conventional SODIMM.
\n* <\/sup>Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.<\/p>\n

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SK hynix also introduced DRAM and NAND products installed in hardware from global partners such as GIGABYTE, ASUS, and Lenovo, demonstrating its portfolio\u2019s ability to meet demands from various devices including laptops and servers.<\/p>\n

Lastly, in the Ethic & ESG section, the company highlighted its selection as one of the World\u2019s Most Ethical Companies\u00ae<\/sup> 2025<\/a>, emphasizing its efforts to build trust with stakeholders through world-class ethical management.<\/p>\n

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At COMPUTEX Taipei 2025, SK hynix enhanced awareness of its AI memory leadership and strengthened partnerships with global players. Looking ahead, the company plans to continue delivering timely and optimized products through collaboration with customers across various sectors from AI servers and data centers to on-device AI, as it looks to become a full stack AI memory provider.<\/p>\n

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