{"id":1385,"date":"2025-05-23T06:00:00","date_gmt":"2025-05-23T06:00:00","guid":{"rendered":"http:\/\/localhost:8080\/sk-hynix-presents-groundbreaking-ai-server-memory-solutions-at-dtw-2025\/"},"modified":"2026-07-16T09:07:52","modified_gmt":"2026-07-16T09:07:52","slug":"sk-hynix-presents-groundbreaking-ai-server-memory-solutions-at-dtw-2025","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/sk-hynix-presents-groundbreaking-ai-server-memory-solutions-at-dtw-2025\/","title":{"rendered":"SK hynix Presents Groundbreaking AI & Server Memory Solutions at DTW 2025"},"content":{"rendered":"
\"\"<\/figure>\n

SK hynix presented its leading memory solutions optimized for AI servers and AI PCs at\u202fDell Technologies World (DTW) 2025<\/a>\u202fin Las Vegas from May 19\u201322.<\/p>\n

Hosted by Dell Technologies, DTW is an annual conference which introduces future technology trends. In line with DTW 2025\u2019s theme of \u201cAccelerate from Ideas to Innovation,\u201d a wide range of products and technologies aimed at driving AI innovation was showcased at the event.<\/p>\n

\u00a0<\/p>\n

\"\"<\/p>\n

\u25b2 Visitors gather at DTW 2025 to discover the latest tech trends<\/p>\n<\/figure>\n

Based on its close partnership with Dell, SK hynix has participated in the event every year to reinforce its leadership in AI. This year, the company organized its booth into six sections: HBM,* <\/sup> CMM (CXL* <\/sup> Memory Module)-DDR5, server DRAM, PC DRAM, eSSDs* <\/sup>, and cSSDs* <\/sup>. Featuring products with strong competitiveness across all areas of DRAM and NAND flash for the AI server, storage and PC markets, the booth garnered strong attention from visitors.<\/p>\n

* <\/sup>High Bandwidth Memory (HBM):\u00a0A high-value, high-performance product that significantly enhances data processing speeds compared to conventional DRAM by vertically stacking multiple DRAM chips. There are six generations of HBM, starting with the original HBM and followed by HBM2, HBM2E, HBM3, HBM3E,\u00a0and HBM4.
\n* <\/sup>Compute Express Link (CXL):\u00a0A next-generation interface that efficiently connects CPUs\/GPUs and memory in high-performance computing systems, supporting large-scale, ultra-fast computations. Applying CXL to existing memory modules can expand capacity by more than 10 times.
\n* <\/sup>Enterprise Solid State\u00a0Drive\u00a0(eSSD):\u00a0SSDs designed for enterprise use, typically installed in servers and data centers.
\n* <\/sup>Client Solid State Drive (cSSD):\u00a0SSDs intended for consumer use, commonly found in personal electronic devices such as PCs and tablets<\/p>\n

\u00a0<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The HBM section at the SK hynix booth<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 12-layer HBM4 samples and the 12-layer HBM3E on display<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 HBM3E presented with B100, NVIDIA\u2019s latest Blackwell GPU<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 A model showing the structure of HBM<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

In the HBM section, SK hynix presented samples of its 12-layer HBM4, capable of processing over 2 terabytes (TB) of data per second with industry-leading speed optimized for AI, alongside the 12-layer HBM3E, the industry\u2019s best-performing and highest-capacity HBM on the market. Currently under development, HBM4 is a next-generation HBM set to offer enhanced base die performance and reduced power consumption. SK hynix recently became the first in the world to provide samples of HBM4 to major customers<\/a>, reaffirming its leadership in AI memory. At the exhibition, the company also displayed its HBM3E paired with the B100, NVIDIA\u2019s latest Blackwell GPU, highlighting its strong partnerships with global customers.<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The CMM-DDR5 section featured two key products<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 The 98 GB and 128 GB CMM-DDR5 products combine high capacity and stable performance<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 A server system for demonstrating CMM-DDR5\u2019s high performance<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

The CMM-DDR5 section featured SK hynix\u2019s high-capacity 96 and 128 gigabyte (GB) CMM-DDR5 products. As a DDR5 memory module based on CXL technology, CMM-DDR5 offers 50% greater capacity and 30% more bandwidth compared to conventional configurations. A video demo captured significant attention from visitors by showcasing how SK hynix\u2019s CMM-DDR5 delivers stable performance while overcoming capacity limitations in systems equipped with server processors from major CPU manufacturers.<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The server DRAM section featured a range of DDR5-based server modules<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 The world\u2019s first 1cnm DDR5 RDIMM product with the 256 GB 3DS solution<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 DDR5 RDIMM and an MRDIMM solution based on the 1c node<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 High-capacity DDR5 MRDIMM solutions on display<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

In the server DRAM section, SK hynix presented a lineup of DDR5-based memory modules for servers. The spotlight was on the DDR5 RDIMM* <\/sup> and MRDIMM* <\/sup> products built using the 1c node,* <\/sup> the sixth generation of the 10 nm process technology. The company also showcased various DRAM solutions designed to maximize AI server performance and reduce power consumption, including its 96 GB DDR5 RDIMM, 256 GB 3DS* <\/sup> DDR5 RDIMM, and DDR5 MRDIMM in both 96 GB and 256 GB capacities.<\/p>\n

*<\/span> Registered Dual In-line Memory Module (RDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate.
\n*<\/span> Multiplexed Rank Dual In-line Memory Module (MRDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate. Speed is enhanced by operating two ranks\u2014the basic operating units of the module\u2014simultaneously.
\n*<\/span> 10 nm DRAM process technology has progressed through six generations: 1x, 1y, 1z, 1a, 1b, and 1c. In August 2024, SK hynix became the first in the world to successfully develop 1c process technology.
\n*<\/span> 3D Stacked Memory (3DS): A high-bandwidth memory product in which two or more DRAM chips are packaged together and interconnected using TSV technology.<\/p>\n

\u00a0<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The high-performance and power-efficient LPCAMM2 in the PC DRAM section<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 GDDR7, the industry-leading graphics memory, on display<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 CSODIMM is optimized for AI<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

Visitors to the PC DRAM section explored SK hynix\u2019s key DRAM offerings for the on-device AI market. These included LPCAMM2, which integrates multiple LPDDR5X* <\/sup> chips into a single module for power efficiency and high performance, and GDDR7, the industry\u2019s best-performing graphics memory product.<\/p>\n

*<\/span> LPDDR5X:\u00a0DRAM used in mobile products,\u00a0such as smartphones,\u00a0tablets\u00a0and laptops,\u00a0featuring low-voltage operation to minimize power consumption. The standard includes the prefix \u201cLP,\u201d which stands for \u201clow power.\u201d The LPDDR standard has been developed in the order of LPDDR1, 2, 3, 4, 4X, 5,\u00a0and 5X, with LPDDR5X representing the seventh-generation LPDDR product.<\/p>\n

\u00a0<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The eSSD section featured various next-generation NAND products<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 SK hynix\u2019s eSSD lineup is optimized for AI servers, data centers, and PCs<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 Dell server system R7625 equipped with the PS1010<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

Various next-generation NAND products were displayed in the eSSD\/cSSD section. Notably, the booth featured a Dell server system (R7625) equipped with the PS1010. A PCIe* <\/sup> 5.0 eSSD which combines multiple 176-layer 4D NAND chips, the PS1010 is optimized for AI-driven applications and data centers.<\/p>\n

*<\/span> Peripheral Component Interconnect express (PCIe): A high-speed input\/output interface with a serial structure used on the main board of a digital device.<\/p>\n

In addition, the section also featured PS1012 and PCB01 SSDs which are leading the AI server and PC markets. The PS1012, boasting a significant capacity of 61 TB, is a PCIe 5.0\/QLC* <\/sup>-based eSSD, meeting the rapidly increasing demand for high-capacity eSSDs.<\/p>\n

*<\/span> Quad-level\u00a0cell\u00a0(QLC):\u00a0A type of memory cell\u00a0used in NAND flash that stores four bits of data in a single cell.\u00a0NAND flash is\u00a0categorized as\u00a0single-level\u00a0cell\u00a0(SLC),\u00a0multi-level\u00a0cell\u00a0(MLC),\u00a0triple-level\u00a0cell\u00a0(TLC),\u00a0QLC,\u00a0and\u00a0penta-level\u00a0cell\u00a0(PLC) depending on how many\u00a0data bits\u00a0can be\u00a0stored in one cell.\u00a0As the amount of information storage increases, more data can be stored\u00a0in the same\u00a0volume.<\/p>\n

\u00a0<\/p>\n

\n
\n
\n\t\"\"

\u25b2 The cSSD section at the booth<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 SK hynix\u2019s cSSD lineup is tailored for the on-device AI market<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 A desktop setup for a demonstration of the PCB01<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

The PCB01, a cSSD product boasting sequential read speeds of 14 GB per second and sequential write speeds of 12 GB per second, was demonstrated during the exhibition. Offering excellent performance and compatibility in a desktop environment with an Intel PC processor, this cSSD is expected to play a key role in the on-device AI market, including in AI PCs.<\/p>\n

\u00a0<\/p>\n

\n
\n
\n\t\"\"

\u25b2 Gyoyoung Lee of SSD Product Planning presenting on AI storage considerations<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 Jungwon Park of SSD Product Planning speaking in the same presentation on AI storage<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n
\n\t\"\"

\u25b2 Santosh Kumar of DRAM Technology Planning at SK hynix America speaking on the need for CMM devices in the AI era<\/p><\/div><\/a>

<\/div><\/div>\n<\/div>\n<\/div>\n
<\/div>
<\/div>
<\/div><\/div><\/div>\n\n

Meanwhile, SK hynix shared insights on AI memory and next-generation technologies through its presentation sessions.<\/p>\n

Technical Leaders Gyoyoung Lee and Jungwon Park from SSD Product Planning gave a joint presentation on \u201cKey Things to Consider for Your AI storage.\u201d Additionally, Technical Leader Santosh Kumar from DRAM Technology Planning (DRAM TP) at SK hynix America emphasized the future value of CMM products with his presentation on \u201cWhy Do We Need CMM Devices in the AI Era?\u201d<\/p>\n

Through DTW 2025, SK hynix observed the rapid growth in demand for AI memory and storage across AI servers, PCs and the broader industry. Moving forward, the company will continue to strengthen technological collaboration based on one-team partnerships with customers, providing high-performance products in a timely manner to meet market needs.<\/p>\n

\n
\n
\n
\n