{"id":1390,"date":"2025-05-21T23:30:00","date_gmt":"2025-05-21T23:30:00","guid":{"rendered":"http:\/\/localhost:8080\/sk-hynix-develops-ufs-solution-based-on-321-high-nand\/"},"modified":"2026-06-18T07:01:17","modified_gmt":"2026-06-18T07:01:17","slug":"sk-hynix-develops-ufs-solution-based-on-321-high-nand","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/sk-hynix-develops-ufs-solution-based-on-321-high-nand\/","title":{"rendered":"SK hynix Develops UFS 4.1 Solution\u00a0Based on 321-High NAND"},"content":{"rendered":"<p><strong>News Highlights<\/strong><\/p>\n<div class=\"post-intro\"><strong>\u00b7 Optimized for on-device AI with best-in-class consecutive reading performance, low power requirement<\/strong><br \/>\n<strong>\u00b7 Thickness reduced by 15% to fit into ultra-slim flagship smartphones<\/strong><br \/>\n<strong>\u00b7 Portfolio with world\u2019s highest 321-layer product to enhance SK hynix\u2019s leadership as full stack AI memory provider<\/strong><\/div>\n<p>\u00a0<\/p>\n<p><strong>Seoul, May 22, 2025<\/strong><\/p>\n<p>SK hynix Inc. (or \u201cthe company\u201d, <a href=\"https:\/\/www.skhynix.com\/eng\/main.do\" target=\"_blank\" rel=\"noreferrer noopener\">www.skhynix.com<\/a>) announced today that it has developed UFS 4.1 solution product adopting the world\u2019s highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-5838\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233213\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_01.jpg\" alt=\"\" width=\"1000\" height=\"657\" srcset=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233213\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_01.jpg 1000w, https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233213\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_01-300x197.jpg 300w, https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233213\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_01-768x505.jpg 768w\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" \/><\/p>\n<p>The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.<\/p>\n<p>With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device.<\/p>\n<p>The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphones.<\/p>\n<p>The product also supports data transfer speed of 4300MB\/s, the fastest sequential read<span style=\"color: #ff0000;\">*<\/span> for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed<span style=\"color: #ff0000;\">*<\/span>, critical for multitasking, by 15% and 40%, respectively.\u00a0 Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience.<\/p>\n<p class=\"footnote\"><span style=\"color: #ff0000;\">*<\/span> Sequential Read\/Write: speed to read and write data of a file sequentially<br \/>\n<span style=\"color: #ff0000;\">*<\/span> Random Read\/Write: speed to read and write data of dispersed files<\/p>\n<p>SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types \u2013 512 GB and 1TB.<\/p>\n<p>Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. \u201cWe are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge.\u201d<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-full wp-image-5839\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233302\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_02.jpg\" alt=\"\" width=\"1000\" height=\"657\" srcset=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233302\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_02.jpg 1000w, https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233302\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_02-300x197.jpg 300w, https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2025\/05\/08233302\/SK-hynix-Develops-UFS-4.1-Solution-Based-on-321-High-NAND_02-768x505.jpg 768w\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" \/><\/p>\n<p><strong>About SK hynix Inc.<\/strong><\/p>\n<p>SK hynix Inc., headquartered in Korea, is the world\u2019s top tier semiconductor supplier offering Dynamic Random Access Memory chips (\u201cDRAM\u201d) and flash memory chips (\u201cNAND\u202fflash\u201d)\u202ffor a wide range of distinguished customers globally. The Company\u2019s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at <a href=\"https:\/\/www.skhynix.com\/eng\/main.do\" target=\"_blank\" rel=\"noreferrer noopener\">www.skhynix.com<\/a>, <a title=\"\" href=\"https:\/\/news.skhynix.com\/\" target=\"_blank\" rel=\"noopener\">news.skhynix.com<\/a>.<\/p>\n<p><strong>Media Contact<\/strong><\/p>\n<p>SK hynix Inc.<br \/>\nGlobal Public Relations<\/p>\n<p><em>Technical Leader<\/em><br \/>\nKanga Kong, Minseok Jang, Sooyeon Lee<br \/>\nE-Mail: <a title=\"\" href=\"mailto:global_pr@skhynix.com\" target=\"_blank\" rel=\"noopener\">global_pr@skhynix.com<\/a><\/p>\n<figure class=\"wp-block-image aligncenter size-full is-resized\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-18582 aligncenter\"  style=\"object-fit: cover; height: 135px;\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27135852\/image.png\" alt=\"\" width=\"1600\" height=\"169\"  \/><\/figure>\n","protected":false},"excerpt":{"rendered":"<p>News Highlights Seoul, May 22, 2025 SK hynix Inc. (or \u201cthe company\u201d, www.skhynix.com) announced today that it has developed UFS 4.1 solution product adopting the world\u2019s highest 321-layer\u00a01Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to [\u2026]<\/p>\n","protected":false},"author":23,"featured_media":1386,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_migrated_source_id":18574,"footnotes":"","_members_access_role":[],"_members_access_error":""},"categories":[4],"tags":[20,106,91,19,64,102,103,104,105],"class_list":["post-1390","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-press","tag-4d-nand","tag-flash-memory","tag-full-stack-ai-memory-provider","tag-nand","tag-nand-flash","tag-nand-solution","tag-on-device-ai","tag-ufs","tag-universal-flash-storage","series-global-ai-company-nand"],"acf":[],"_links":{"self":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1390","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/users\/23"}],"replies":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/comments?post=1390"}],"version-history":[{"count":13,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1390\/revisions"}],"predecessor-version":[{"id":10362,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1390\/revisions\/10362"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media\/1386"}],"wp:attachment":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media?parent=1390"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/categories?post=1390"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/tags?post=1390"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}