{"id":1418,"date":"2025-04-25T06:00:00","date_gmt":"2025-04-25T06:00:00","guid":{"rendered":"http:\/\/localhost:8080\/tsmc-2025-technology-symposium-sk-hynix-showcases-hbm4\/"},"modified":"2026-07-29T14:53:53","modified_gmt":"2026-07-29T05:53:53","slug":"tsmc-2025-technology-symposium-sk-hynix-showcases-hbm4","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/tsmc-2025-technology-symposium-sk-hynix-showcases-hbm4\/","title":{"rendered":"TSMC 2025 Technology Symposium: SK hynix Showcases HBM4 to Highlight AI Memory Leadership"},"content":{"rendered":"
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SK hynix showcased groundbreaking memory solutions including HBM4* <\/sup> at the TSMC 2025 North America Technology Symposium<\/a> held in Santa Clara, California on April 23.<\/p>\n

* <\/sup>High Bandwidth Memory\u00a0(HBM):\u00a0A high-value, high-performance product that vertically stacks multiple DRAM chips to dramatically enhance data processing speed compared to conventional DRAM.\u00a0There are\u00a0six generations\u00a0of HBM, starting with the original HBM\u00a0followed by\u00a0HBM2, HBM2E, HBM3, HBM3E and HBM4.<\/p>\n

The TSMC North America Technology Symposium is an annual event in which TSMC shares its latest technologies and products with global partners. This year, SK hynix participated under the slogan \u201cMemory, Powering AI and Tomorrow,\u201d highlighting its technological leadership in AI memory through exhibition zones including HBM Solutions and AI\/Data Center Solutions.<\/p>\n

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\u25b2 SK hynix\u2019s 12-layer HBM4 and 16-layer HBM3E on display alongside NVIDIA\u2019s B100 GPU<\/p>\n

In the HBM Solution section, SK hynix presented samples of its 12-layer HBM4 and 16-layer HBM3E products. The 12-layer HBM4 is a next-generation HBM capable of processing over 2 terabytes (TB) of data per second. In March, the company announced it has become the first in the world to supply HBM4 samples to major customers<\/a> and plans to complete preparations for mass production within the second half of 2025.<\/p>\n

The B100, NVIDIA\u2019s latest Blackwell GPU equipped with the 8-layer HBM3E, was also exhibited in the section along with 3D models of key HBM technologies such as TSV* <\/sup> and Advanced MR-MUF* <\/sup>, drawing significant attention from visitors.<\/p>\n

* <\/sup>Through-Silicon Via\u00a0(TSV):\u00a0A technology\u00a0to connect\u00a0the upper and lower layers of DRAM chips\u00a0by creating\u00a0thousands of microscopic holes\u00a0in each of the chip layers\u00a0and running\u00a0vertical electrodes\u00a0through those openings.
\n* <\/sup>Advanced MR-MUF:\u00a0A next-generation MR-MUF technology that incorporates\u00a0warpage\u00a0control, allowing chips\u00a0which are\u00a040% thinner than conventional chips to be stacked without warping. Additionally, the use of a new protective material improves heat dissipation.<\/p>\n

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\u25b2 DDR5 RDIMM and MRDIMM products on display, including those based on the 1c node<\/p>\n<\/figure>\n

In the AI\/Data Center Solutions section, SK hynix displayed its lineup of server memory modules, including RDIMM* <\/sup> and MRDIMM* <\/sup> products. The section featured various high-performance server modules based on DDR5 DRAM built using the 1c node,* <\/sup> the sixth generation of the 10 nm process technology.<\/p>\n

* <\/sup>Registered Dual In-line Memory Module\u00a0(RDIMM):\u00a0A server memory module product in which multiple DRAM chips are mounted on a substrate.
\n* <\/sup>Multiplexer Combined Ranks Dual In-line Memory Module\u00a0(MRDIMM):\u00a0A server memory module product in which multiple DRAM chips are mounted on a substrate.\u00a0Speed is enhanced\u00a0by operating two ranks\u2014the basic operating units of the module\u2014simultaneously.
\n* <\/sup>Previous generations of the 10\u00a0nm DRAM process\u00a0have been\u00a0named\u00a0using number-letter\u00a0designations\u00a0in the order\u00a0of\u00a01x,\u00a01y,\u00a01z,\u00a01a\u00a0and\u00a01b. In August 2024, SK hynix became the first in the world to successfully develop the\u00a0sixth\u00a0generation\u00a0of\u00a0the\u00a0process,\u00a0named 1c.<\/p>\n

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Notably, SK hynix exhibited a range of modules designed to enhance AI and data center performance while reducing power consumption. These included the MRDIMM lineup with a speed of 12.8 gigabits per second (Gbps) and capacities of 64 GB, 96 GB, and 256 GB; RDIMM modules with a speed of 8 Gbps in 64 GB and 96 GB capacities; and a 256 GB 3DS* <\/sup> RDIMM.<\/p>\n

* <\/sup>3D Stacked Memory\u00a0(3DS):\u00a0A high-bandwidth memory product in which two or more DRAM chips are\u00a0packaged together and\u00a0interconnected using TSV\u00a0technology.<\/p>\n

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\u25b2 Visitors gather at SK hynix\u2019s booth to see the latest memory innovations<\/p>\n

At the TSMC 2025 North America Technology Symposium, SK hynix\u2019s next-generation solutions such as HBM4 drew great attention from industry officials. By successfully mass-producing its HBM lineup through continued technological collaboration with partners such as TSMC, the company aims to expand the AI memory ecosystem and further solidify its industry leadership.<\/p>\n

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