{"id":1644,"date":"2024-11-21T00:00:05","date_gmt":"2024-11-21T00:00:05","guid":{"rendered":"http:\/\/localhost:8080\/sk-hynix-starts-mass-production-of-world-first-321-high-nand\/"},"modified":"2026-06-15T08:37:19","modified_gmt":"2026-06-15T08:37:19","slug":"sk-hynix-starts-mass-production-of-world-first-321-high-nand","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/sk-hynix-starts-mass-production-of-world-first-321-high-nand\/","title":{"rendered":"SK hynix Starts Mass Production of World\u2019s First 321-High NAND"},"content":{"rendered":"<p><strong>News Highlights<\/strong><\/p>\n<div class=\"post-intro\"><strong>\u00b7 Industry\u2019s first 321-high NAND of 1Tb developed for supply in 1H25<\/strong><br \/>\n<strong>\u00b7 \u201cThree Plugs\u201d process technology leads to technological breakthrough for stacking, improves speed, power efficiency<\/strong><br \/>\n<strong>\u00b7 Company on track to becoming \u201cFull Stack AI Memory Provider\u201d with enhanced competitiveness in AI storage<\/strong><\/div>\n<p><strong>Seoul, November 21, 2024<\/strong><\/p>\n<p style=\"text-align: justify;\">SK hynix Inc. (or \u201cthe company\u201d, <span style=\"text-decoration: underline;\"><a href=\"https:\/\/www.skhynix.com\/eng\/main.do\" target=\"_blank\" rel=\"noopener noreferrer\">www.skhynix.com<\/a><\/span>) announced today that\u00a0it has started mass production of the world\u2019s first triple level cell<span style=\"color: #ff0000;\">*<\/span>-based 321-high 4D NAND Flash with 1Tb capacity.<\/p>\n<p style=\"font-size: 14px; font-style: italic; color: #555;\"><span style=\"color: #ff0000;\">*<\/span>NAND Flash products are categorized into single-, multi-, triple-, quadruple-, and penta-level cells, depending on the number of the information in the format of bit unit is stored in a cell. A bigger number of information stored means more data can be stored in the same space.<\/p>\n<p class=\"Default\"><span lang=\"EN-US\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-16365 size-full\" title=\"SK hynix Starts Mass Production of World\u2019s First 321-High NAND\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27142439\/SK-hynix-Starts-Mass-Production-of-Worlds-First-321-High-NAND_01.jpg\" alt=\"SK hynix Starts Mass Production of World\u2019s First 321-High NAND\" width=\"1000\" height=\"629\" \/><\/span><\/p>\n<p>Following its previous record as the industry\u2019s first provider of the world\u2019s highest 238-layer NAND since June last year, SK hynix has become the world\u2019s first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.<\/p>\n<p>Stacking more than 300 layers came into reality as the company successfully adopted the \u201c3 plugs<span style=\"color: #ff0000;\">*<\/span>\u201d process technology. Known for an excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress<span style=\"color: #ff0000;\">*<\/span> material, while introducing the technology that automatically corrects alignments among the plugs.<\/p>\n<p style=\"font-size: 14px; font-style: italic; color: #555;\"><span style=\"color: #ff0000;\">*<\/span><strong>Plug<\/strong>: a vertical hole through layers of substrates aimed at creating cells at once<br \/>\n<span style=\"color: #ff0000;\">*<\/span><strong>Low Stress<\/strong>: Preventing wafer warpage by changing the material into the plugs<\/p>\n<p>With the adoption of the same development platform from the 238-high NAND on the 321-high product, the company could also improve the productivity by 59%, compared with the previous generation, by minimizing any impacts from a process switch.<\/p>\n<p style=\"text-align: justify;\">The latest product comes with an improvement of 12% in data transfer speed and 13% in reading performance, compared with the previous generation. It also enhances data reading power efficiency by more than 10%.<\/p>\n<p style=\"text-align: justify;\">SK hynix plans to steadily expand the use of the 321-high products by providing them to the nascent AI applications, which require low power and high performance.<\/p>\n<p style=\"text-align: justify;\">Jungdal Choi, Head of NAND Development at SK hynix, said that the latest development brings the company a step closer to the leadership of the AI storage market represented by SSD for AI data centers and on-device AI. \u201cSK hynix is on track to advancing to the Full Stack AI Memory Provider by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM.\u201d<\/p>\n<p style=\"text-align: justify;\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-16366 size-full\" title=\"SK hynix Starts Mass Production of World\u2019s First 321-High NAND\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27142442\/SK-hynix-Starts-Mass-Production-of-Worlds-First-321-High-NAND_02.jpg\" alt=\"SK hynix Starts Mass Production of World\u2019s First 321-High NAND\" width=\"1000\" height=\"710\" \/><\/p>\n<p><strong>About SK hynix Inc.<\/strong><\/p>\n<p style=\"text-align: justify;\">SK hynix Inc., headquartered in Korea, is the world\u2019s top tier semiconductor supplier offering Dynamic Random Access Memory chips (\u201cDRAM\u201d), flash memory chips (\u201cNAND flash\u201d) and CMOS Image Sensors (\u201cCIS\u201d) for a wide range of distinguished customers globally. The Company\u2019s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the <span data-teams=\"true\"><span class=\"ui-provider a b c d e f g h i j k l m n o p q r s t u v w x y z ab ac ae af ag ah ai aj ak\" dir=\"ltr\">Luxembourg<\/span><\/span>\u00a0Stock Exchange. Further information about SK hynix is available at <span style=\"text-decoration: underline;\"><a href=\"https:\/\/urldefense.com\/v3\/__https:\/www.skhynix.com\/eng\/main.do__;!!N96JrnIq8IfO5w!gXFbF1sRVRWAEDJ3PaZ-I4YA0xhBRWyPvGQbcrGYpNvHRRWenoc8P0VxyvcqxTMjl4dfFcFDkTnoPXz6hDU$\" target=\"_blank\" rel=\"noopener noreferrer\">www.skhynix.com<\/a><\/span>, <span style=\"text-decoration: underline;\"><a href=\"https:\/\/urldefense.com\/v3\/__https:\/news.skhynix.com\/__;!!N96JrnIq8IfO5w!gXFbF1sRVRWAEDJ3PaZ-I4YA0xhBRWyPvGQbcrGYpNvHRRWenoc8P0VxyvcqxTMjl4dfFcFDkTnozIJInBk$\" target=\"_blank\" rel=\"noopener noreferrer\">news.skhynix.com<\/a><\/span>.<\/p>\n<p><strong>Media Contact<\/strong><\/p>\n<p style=\"text-align: justify;\">SK hynix Inc.<br \/>\nGlobal Public Relations<\/p>\n<p style=\"text-align: justify;\">Technical Leader<br \/>\nKanga Kong<br \/>\nE-Mail: <span style=\"text-decoration: underline;\"><a href=\"mailto:global_newsroom@skhynix.com\">global_newsroom@skhynix.com<\/a><\/span><\/p>\n<p style=\"text-align: justify;\">Technical Leader<br \/>\nSooyeon Lee<br \/>\nE-Mail: <span style=\"text-decoration: underline;\"><a href=\"mailto:global_newsroom@skhynix.com\">global_newsroom@skhynix.com<\/a><\/span><\/p>\n<p><a href=\"https:\/\/linkedin.com\/showcase\/skhynix-news-and-stories\/\" target=\"_blank\" rel=\"noopener noreferrer\"><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-15776 aligncenter\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27135953\/SK-hynix_Newsroom-banner_1.png\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" alt=\"\" width=\"800\" height=\"135\" \/><\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>News Highlights Industry\u2019s first 321-high NAND of 1Tb developed for supply in 1H25 \u201cThree Plugs\u201d process technology leads to technological breakthrough for stacking, improves speed, power efficiency Company on track to becoming \u201cFull Stack AI Memory Provider\u201d with enhanced competitiveness in AI storage Seoul, November 21, 2024 SK hynix Inc. (or \u201cthe company\u201d, www.skhynix.com) announced [\u2026]<\/p>\n","protected":false},"author":23,"featured_media":1641,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_migrated_source_id":16938,"footnotes":"","_members_access_role":[],"_members_access_error":""},"categories":[4],"tags":[189,90,20,190,91,19,64,179],"class_list":["post-1644","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-press","tag-321-layer","tag-321-layer-nand-flash","tag-4d-nand","tag-ai-storage","tag-full-stack-ai-memory-provider","tag-nand","tag-nand-flash","tag-tlc","series-global-ai-company-nand"],"acf":[],"_links":{"self":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1644","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/users\/23"}],"replies":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/comments?post=1644"}],"version-history":[{"count":4,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1644\/revisions"}],"predecessor-version":[{"id":5884,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/1644\/revisions\/5884"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media\/1641"}],"wp:attachment":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media?parent=1644"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/categories?post=1644"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/tags?post=1644"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}