{"id":2501,"date":"2023-08-21T00:00:05","date_gmt":"2023-08-21T00:00:05","guid":{"rendered":"http:\/\/localhost:8080\/sk-hynix-develops-worlds-best-performing-hbm3e\/"},"modified":"2026-06-09T06:11:09","modified_gmt":"2026-06-09T06:11:09","slug":"sk-hynix-develops-worlds-best-performing-hbm3e","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/sk-hynix-develops-worlds-best-performing-hbm3e\/","title":{"rendered":"SK hynix Develops World\u2019s Best Performing HBM3E, Provides Samples to Customer for Performance Evaluation"},"content":{"rendered":"<p><strong>News Highlights<\/strong><\/p>\n<div class=\"post-intro\"><strong>\u00b7 Product to drive AI tech innovation with industry\u2019s top performance to be produced in volume from 1H24<\/strong><br \/>\n<strong>\u00b7 Launch of HBM3E to solidify SK hynix\u2019s unrivaled leadership in AI memory market following success of HBM3<\/strong><br \/>\n<strong>\u00b7 Expansion of HBM3E supply following industry\u2019s largest scale of mass production of HBM to help accelerate business turnaround<\/strong><\/div>\n<p><strong>Seoul, August 21, 2023<\/strong><br \/>\nSK hynix Inc. (or \u201cthe company\u201d, <span style=\"text-decoration: underline;\"><a href=\"https:\/\/urldefense.com\/v3\/__http:\/www.skhynix.com__;!!N96JrnIq8IfO5w!gXFbF1sRVRWAEDJ3PaZ-I4YA0xhBRWyPvGQbcrGYpNvHRRWenoc8P0VxyvcqxTMjl4dfFcFDkTnoKHV-F8I$\" target=\"_blank\" rel=\"noopener noreferrer\">www.skhynix.com<\/a><\/span>) announced today that it successfully developed HBM3E<span style=\"color: #ff0000;\">*<\/span>, the next-generation of the highest-specification DRAM for AI applications currently available, and said a customer\u2019s evaluation of samples is underway.<\/p>\n<p style=\"font-size: 14px; font-style: italic; color: #555;\"><span style=\"color: #ff0000;\">*<\/span><strong>HBM (High Bandwidth Memory)<\/strong>: A high-value, high-performance memory that vertically interconnects multiple DRAM chips, enabling a dramatic increase in data processing speed in comparison to earlier DRAM products. HBM3E is the extended version of the HBM3 and the 5<sup>th<\/sup> generation of its kind, succeeding the previous generations HBM, HBM2, HBM2E and HBM3.<\/p>\n<p><em>\u00a0<\/em>The company said that the successful development of HBM3E, the extended version of HBM3 which delivers the world\u2019s best specifications, comes on top of its experience as the industry\u2019s sole mass provider of HBM3. With its experience as the supplier of the industry\u2019s largest volume of HBM products and the mass-production readiness level, SK hynix plans to mass produce HBM3E from the first half of next year and solidify its unrivaled leadership in AI memory market.<\/p>\n<p>According to the company, the latest product not only meets the industry\u2019s highest standards of speed, the key specification for AI memory products, but all categories including capacity, heat dissipation and user-friendliness.<\/p>\n<p>In terms of speed, the HBM3E can process data up to 1.15 terabytes(TB) a second, which is equivalent to processing more than 230 Full-HD movies of 5GB-size each in a second.<\/p>\n<p><em>\u00a0<\/em>In addition, the product comes with a 10% improvement in heat dissipation by adopting the cutting-edge technology of the Advanced Mass Reflow Molded Underfill, or MR-MUF<span style=\"color: #ff0000;\">*<\/span>, onto the latest product. It also provides backward compatibility<span style=\"color: #ff0000;\">*<\/span> that enables the adoption of the latest product even onto the systems that have been prepared for the HBM3 without a design or structure modification.<\/p>\n<p style=\"font-size: 14px; font-style: italic; color: #555;\"><span style=\"color: #ff0000;\">*<\/span><strong>MR-MUF<\/strong>: a process of attaching chips to circuits and filling the space between chips with a liquid material when stacking chips instead of laying a film to improve efficiency and heat dissipation<\/p>\n<p style=\"font-size: 14px; font-style: italic; color: #555;\"><span style=\"color: #ff0000;\">*<\/span><strong>Backward Compatibility<\/strong>: an ability to allow interoperability between an older and a new system without modification to the design, especially in information technology and computing spaces. A new memory product with backward compatibility allows continued use of the existing CPUs and GPUs without modifications to design<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-12627 aligncenter\" src=\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27162204\/SK-hynix-HBM3E_01.jpg\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" alt=\"\" width=\"1000\" height=\"695\" \/><\/p>\n<p>\u201cWe have a long history of working with SK hynix on High Bandwidth Memory for leading edge accelerated computing solutions,\u201d said Ian Buck, Vice President of Hyperscale and HPC Computing at NVIDIA. \u201cWe look forward to continuing our collaboration with HBM3E to deliver the next generation of AI computing.\u201d<\/p>\n<p>Sungsoo Ryu, Head of DRAM Product Planning at SK hynix, said that the company, through the development of HBM3E, has strengthened its market leadership by further enhancing the completeness of HBM product lineup, which is in the spotlight amid the development of AI technology. \u201cBy increasing the supply share of the high-value HBM products, SK hynix will also seek a fast business turnaround.\u201d<br \/>\n<strong><\/strong><\/p>\n<p><strong>About SK hynix Inc.<\/strong><br \/>\nSK hynix Inc., headquartered in Korea, is the world\u2019s top tier semiconductor supplier offering Dynamic Random Access Memory chips (\u201cDRAM\u201d), flash memory chips (\u201cNAND flash\u201d) and CMOS Image Sensors (\u201cCIS\u201d) for a wide range of distinguished customers globally. The Company\u2019s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at <span style=\"text-decoration: underline;\"><a href=\"https:\/\/urldefense.com\/v3\/__https:\/www.skhynix.com\/eng\/main.do__;!!N96JrnIq8IfO5w!gXFbF1sRVRWAEDJ3PaZ-I4YA0xhBRWyPvGQbcrGYpNvHRRWenoc8P0VxyvcqxTMjl4dfFcFDkTnoPXz6hDU$\" target=\"_blank\" rel=\"noopener noreferrer\">www.skhynix.com<\/a><\/span>, <span style=\"text-decoration: underline;\"><a href=\"https:\/\/urldefense.com\/v3\/__https:\/news.skhynix.com\/__;!!N96JrnIq8IfO5w!gXFbF1sRVRWAEDJ3PaZ-I4YA0xhBRWyPvGQbcrGYpNvHRRWenoc8P0VxyvcqxTMjl4dfFcFDkTnozIJInBk$\" target=\"_blank\" rel=\"noopener noreferrer\">news.skhynix.com<\/a><\/span>.<\/p>\n<p><strong>Media Contact<\/strong><br \/>\nSK hynix Inc.<br \/>\nGlobal Public Relations<\/p>\n<p>Technical Leader<br \/>\nKanga Kong<br \/>\nE-Mail: <span style=\"text-decoration: underline;\"><a href=\"mailto:global_newsroom@skhynix.com\">global_newsroom@skhynix.com<\/a><\/span><\/p>\n<p>Technical Leader<br \/>\nJoori Roh<br \/>\nE-Mail: <span style=\"text-decoration: underline;\"><a href=\"mailto:global_newsroom@skhynix.com\">global_newsroom@skhynix.com<\/a><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>News Highlights Product to drive AI tech innovation with industry\u2019s top performance to be produced in volume from 1H24 Launch of HBM3E to solidify SK hynix\u2019s unrivaled leadership in AI memory market following success of HBM3 Expansion of HBM3E supply following industry\u2019s largest scale of mass production of HBM to help accelerate business turnaround Seoul, [\u2026]<\/p>\n","protected":false},"author":23,"featured_media":2498,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_migrated_source_id":12622,"footnotes":"","_members_access_role":[],"_members_access_error":""},"categories":[4],"tags":[258,51,13,36,94],"class_list":["post-2501","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-press","tag-ai-application","tag-dram","tag-hbm","tag-hbm3e","tag-sk-hynix"],"acf":[],"_links":{"self":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/2501","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/users\/23"}],"replies":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/comments?post=2501"}],"version-history":[{"count":3,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/2501\/revisions"}],"predecessor-version":[{"id":6121,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/2501\/revisions\/6121"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media\/2498"}],"wp:attachment":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media?parent=2501"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/categories?post=2501"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/tags?post=2501"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}