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Seoul, November 4, 2018<\/strong> SK hynix combined its 3D CTF with PUC for the first time in the industry, which is different from the way of integrating 3D Floating Gate and PUC. As a result, it attained the industry\u2019s finest performance and productivity. The Company named the product \u2018CTF-based 4D NAND Flash\u2019 to distinguish it from current 3D NAND Flash technologies.<\/p>\n The 4D NAND chip reduces more than 30% of chip size and increases bit productivity per wafer by 49% compared to the Company\u2019s 72-Layer 512Gb 3D NAND. Moreover, the product has 30% higher write and 25% higher read performance. Also, its data bandwidth is doubled to the industry\u2019s biggest 64KB (Kilobytes). With the introduction of a multiple gate insulators architecture, its data I\/O (Input Output) speed reaches 1,200Mbps (Megabits\/sec) at 1.2V (Volt) of operation power.<\/p>\n In August, SK hynix already announced that it would enhance the solution market competence with various 4D NAND applications at FMS(Flash Memory Summit) 2018 held in Santa Clara, CA.<\/p>\n Above all, with the 96-Layer 512Gb 4D NAND, SK hynix will introduce 1TB (Terabyte) client SSDs equipped with the Company\u2019s own controllers and firmware within this year. Plus, the enterprise SSDs will be introduced in the second half of 2019. SK hynix will also respond to the high density mobile market with the introduction of UFS (Universal Flash Storage) 3.0 in the first half of 2019. Furthermore, the Company will roll out ultra-high density 96-Layer 1Tb (Terabit) TLC and QLC (Quad-Level Cell) in 2019.<\/p>\n \u201cThis 96-Layer CTF-based 4D NAND, with the industry\u2019s top cost competitiveness and performance, will become a milestone in the Company\u2019s NAND Flash business, as a platform in developing future products,\u201d said vice president J.T. Kim, the Head of NAND Marketing. \u201cThe Company plans to start the early stage mass production of it within this year and further expand the production in M15 to actively respond to a variety of clients,\u201d he added.<\/p>\n \u00a0<\/p>\n <\/p>\n <\/p>\n \u00a0<\/p>\n Media Contact<\/strong> Assistant Manager
\nSK hynix Inc. (or \u2018the Company\u2019, www.skhynix.com<\/a>) launched the world\u2019s first 96-Layer 512Gb (Gigabit) \u2018CTF based 4D (Four-Dimensional) NAND Flash (4D NAND)\u2019 based on its TLC (Triple-Level Cell) arrays, using 3D CTF (Charge Trap Flash) design paired with the PUC (Peri. Under Cell) technology. The Company will start the early stage of mass production of the 96-Layer 4D NAND within this year. A single 512Gb NAND Flash chip can represent 64GB (Gigabytes) storage.<\/p>\n![\"\"](\"https:\/\/d18r0a86za96sg.cloudfront.net\/wp-content\/uploads\/2026\/05\/27201732\/3966626502534071.jpg\")
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\nSK hynix Inc.
\nPublic Relations<\/p>\n
\nHeeyoung Son
\nPhone: +82.31.8093.4719
\nE-Mail: heeyoung.son@sk.com<\/a><\/p>\n