{"id":5233,"date":"2008-04-02T08:26:55","date_gmt":"2008-04-02T08:26:55","guid":{"rendered":"http:\/\/localhost:8080\/hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation\/"},"modified":"2026-06-10T07:34:27","modified_gmt":"2026-06-10T07:34:27","slug":"hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/hynix-announces-1066mbps-512mb-1gb-2gb-ddr3-so-dimm-validation\/","title":{"rendered":"hynix Announces 1066Mbps, 512MB\/1GB\/2GB DDR3 SO-DIMM Validation"},"content":{"rendered":"

ICHEON, Korea \u2014 April 2nd, 2008<\/strong><\/p>\n

hynix Semiconductor Inc. (\u201chynix\u201d or \u201cthe Company\u201d) today announced the validation per Intel procedures and specifications of the 512MB(HMT164S6AFP6C-G7N0),1GB(HMT112S6AFP6C-G7N0) and 2GB (HMT125 S6AFP8C-G7N0) DDR3, 1066Mbps SO-DIMMs all of which are assembled with 66nm 1Gb DDR3 SDRAM components. hynix\u2019s 66nm 1Gb DDR3 DRAM component was validated in October of last year.<\/p>\n

hynix\u2019s validated DDR3 SODIMMs, 512Megabyte, 1Gigabyte and 2Gigabyte, consist of 1Gigabit DDR3 SDRAM component manufactured on the Company\u2019s leading edge 66nm process technology. These devices boast operating speed of 1066Mbps at 1.5V power supply. This speed is offered in latency combinations of 7-7-7 to suit the needs from a wide range of Mobile PCs.<\/p>\n

In addition to its high speed characteristics, DDR3 features reduced current consumption by almost 25%, compared to the present generation DDR2. hynix\u2019s \u2018three-dimensional transistor\u2019 architecture minimizes current leakage to further reduce overall current consumption and ensure data integrity.<\/p>\n

Mooly Eden of Intel Mobile Platforms Group, Vice President & General Manager, explained \u201cDDR3 is good for mobile computing because it will allow system designers to use upcoming Intel\uff1f\uff1f Centrino\u2122 processor technology mobile platforms to deliver even higher computational and graphics performance with lower power. I am pleased with the DRAM industry\u2019s readiness for this technology in 2008.\u201d<\/p>\n

DDR3 is the next generation DRAM interface which is to succeed the current mainstream DDR2 products. Demand for DDR3 is expected to emerge towards the end of the year. According to market research firm iSuppli, DDR3 will account for 25% of total DRAM shipments by the end of 2008 and dominate the market by 2010.<\/p>\n

Mass production of the DDR3 SO-DIMM, will begin in the second quarter of this year.<\/p>\n

\"\"<\/p>\n

\u00a0<\/p>\n

About hynix Semiconductor Inc.<\/strong><\/p>\n

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world\u2019s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (\u201cDRAMs\u201d) and Flash memory chips to a wide range of established international customers. The Company\u2019s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com<\/a><\/p>\n

Media Contact<\/strong><\/p>\n

CORPORATE COMMUNICATIONS
\nAssistant Manager
\nSeong-Ae Park
\nPhone: +82.2.3459.5325
\nFax: +82.2.3459.5333
\nE-mail: seongae.park@hynix.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

ICHEON, Korea \u2014 April 2nd, 2008 hynix Semiconductor Inc. (\u201chynix\u201d or \u201cthe Company\u201d) today announced the validation per Intel procedures and specifications of the 512MB(HMT164S6AFP6C-G7N0),1GB(HMT112S6AFP6C-G7N0) and 2GB (HMT125 S6AFP8C-G7N0) DDR3, 1066Mbps SO-DIMMs all of which are assembled with 66nm 1Gb DDR3 SDRAM components. hynix\u2019s 66nm 1Gb DDR3 DRAM component was validated in October of last [\u2026]<\/p>\n","protected":false},"author":23,"featured_media":5231,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_migrated_source_id":1938,"footnotes":"","_members_access_role":[],"_members_access_error":""},"categories":[4],"tags":[630,586,579,628,559,629],"class_list":["post-5233","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-press","tag-1066mbps","tag-1gb","tag-2gb","tag-512mb","tag-ddr3","tag-so-dimm"],"acf":[],"_links":{"self":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/5233","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/users\/23"}],"replies":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/comments?post=5233"}],"version-history":[{"count":1,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/5233\/revisions"}],"predecessor-version":[{"id":6764,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/posts\/5233\/revisions\/6764"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media\/5231"}],"wp:attachment":[{"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/media?parent=5233"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/categories?post=5233"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/news.skhynix.com\/en\/wp-json\/wp\/v2\/tags?post=5233"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}