{"id":587,"date":"2026-04-23T06:41:34","date_gmt":"2026-04-23T06:41:34","guid":{"rendered":"http:\/\/localhost:8080\/tsmc-technology-symposium-2026\/"},"modified":"2026-07-16T05:42:49","modified_gmt":"2026-07-16T05:42:49","slug":"tsmc-technology-symposium-2026","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/tsmc-technology-symposium-2026\/","title":{"rendered":"\u201cOvercoming Technological Limits Requires the Integration of Memory and Logic\u201d: SK hynix Presents Vision at TSMC Symposium"},"content":{"rendered":"

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At the TSMC Technology Symposium 2026, held in the heart of Silicon Valley, SK hynix demonstrated its dominant standing as an AI memory powerhouse and reaffirmed its strong partnership with TSMC. In a keynote address, the company put forth the concept of \u2018the integration of memory and logic\u2019 and outlined a roadmap for the AI era. Here is a firsthand look at the event and its electric atmosphere.<\/p>\n

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A New Era Built on Semiconductors: Innovative Technologies Shared for AI Optimization<\/h3>\n
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\u25b2 SK hynix booth at the TSMC Technology Symposium 2026<\/p><\/div><\/a>

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\u25b2 SK hynix booth at the TSMC Technology Symposium 2026<\/p><\/div><\/a>

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\u25b2 SK hynix booth at the TSMC Technology Symposium 2026<\/p><\/div><\/a>

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On the 22nd (local time), the Santa Clara Convention Center in San Jose, California, was packed with crowds from early morning. TSMC hosts its Open Innovation Platform (OIP) forums across seven major regions worldwide, bringing together semiconductor design and manufacturing partners to share the latest technologies and collaborative achievements. The North American symposium, held under the slogan \u201cExpanding AI with Leadership Silicon,\u201d showcased innovative technologies optimized for AI accelerators and High Performance Computing (HPC).<\/p>\n

In the area of logic technology, the event focused on progress in advanced process nodes beyond 3\u339a, spanning 2\u339a, A16, and A14*<\/sup>. In the packaging domain, TSMC highlighted stacking innovations leveraging technologies such as CoWoS*<\/sup>, InFO*<\/sup>, and SoIC*<\/sup>. Through these developments, TSMC set out a clear strategic direction to target the AI data center and cloud markets with high density transistors and low power architectures, keeping pace with the rapid expansion of AI solutions across domains ranging from HPC to smartphones and autonomous driving.<\/p>\n

*<\/sup>A16 refers to TSMC\u2019s next generation 1.6\u339a class process, while A14 denotes the subsequent 1.4\u339a class advanced process planned to follow A16.
\n* <\/sup>CoWoS (Chip on Wafer on Substrate): TSMC\u2019s 2.5D packaging technology that places a chip on a wafer and then connects it to a substrate. By arranging logic chips and HBM side by side on a single package, it increases data transfer speeds and is considered a key enabler for AI accelerators and HPC.
\n* <\/sup>InFO (Integrated Fan-Out): A packaging approach that extends circuitry beyond the chip boundary using fan-out technology instead of a traditional package substrate. It reduces thickness while improving power efficiency, and is primarily used in mobile application processors.
\n* <\/sup>SoIC (System on Integrated Chips): An advanced 3D stacking packaging technology that vertically bonds different chips together. Utilizing hybrid bonding technology that connects chips without bumps, SoIC widens data processing bandwidth and reduces chip size, making it an essential technology for next generation AI semiconductor production.<\/p>\n

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The Way Forward in the AI Era: Disruptive Innovation That Breaks Down Boundaries<\/h3>\n
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SK hynix Chief Development Officer (CDO) Ahn Hyun delivered a keynote address titled \u201cThe Next Era of AI Memory: Intelligent, Integrated, and Co-created,\u201d making a compelling case for disruptive innovation that breaks down boundaries to overcome technological limits.<\/p>\n

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\u25b2 SK hynix Chief Development Officer (CDO) Ahn Hyun delivering the keynote address<\/p>\n

CDO Ahn began by outlining the direction of memory technology that SK hynix is pursuing in the AI era. \u201cThe most critical obstacle hindering the advancement of AI today is the Memory Wall, a bandwidth bottleneck that prevents the rapid processing of ever-growing volumes of data,\u201d he noted. \u201cTo break through this barrier, we need efforts that go beyond incremental improvements to existing architectures and take a fundamentally new approach.\u201d<\/p>\n

He further stated, \u201cSK hynix is evolving from a simple \u2018provider\u2019 into a \u2018creator\u2019 that collaborates from the architecture design stage to devise and deliver the memory solutions that are needed.\u201d He added, \u201cGoing forward, we will move beyond supplying standardized HBM for AI accelerators to offering custom HBM tailored to specific customer requirements, and we will extend this approach across all solutions spanning DRAM and NAND to enhance the performance and efficiency of AI systems.\u201d<\/p>\n

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\u25b2 SK hynix Chief Development Officer (CDO) Ahn Hyun delivering the keynote address<\/p>\n<\/figure>\n

CDO Ahn also presented a new technological vision that SK hynix is preparing. \u201cThe integration of memory and logic technologies represents a new breakthrough that can transcend the limitations of existing architectures to maximize AI performance,\u201d he said. \u201cBuilding on this foundation, we will strengthen our strategic collaboration, including the adoption of TSMC\u2019s advanced logic processes for the base die starting with HBM4, and provide a wide range of customized solutions optimized for diverse customer workloads, from custom HBM to HBF*<\/sup> and 3D Stacked DRAM on Logic*<\/sup>.\u201d<\/p>\n

* <\/sup>HBF (High Bandwidth Flash): A next-generation NAND solution with enhanced ultra-high-speed data transfer capabilities, designed to efficiently handle the surge in large-scale computational data (such as KV Cache). Like HBM, it applies logic processes to the base die to maximize performance.
\n*\u00a0<\/sup>3D Stacked DRAM (3D Stacked DRAM on Logic): A state-of-the-art stacking technology that vertically stacks DRAM directly on top of logic semiconductors such as SoC (System on Chip). By significantly increasing data pathways (I\/O), it minimizes latency and dramatically improves power efficiency and space utilization, making it particularly suited for on-device AI applications.<\/p>\n

Finally, CDO Ahn defined \u2018collaboration\u2019 as the core value essential for the frontlines of AI, emphasizing SK hynix\u2019s role as the optimal partner for the AI era. \u201cSK hynix is the optimal partner with unrivaled technological capabilities in AI memory, including HBM,\u201d he said. \u201cLet us become \u2018one team\u2019 where all partners share technological progress in real time and solve complex problems together, and open a new AI era together.\u201d<\/p>\n

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The Power of \u2018Invisible Technology\u2019 Opening New Possibilities for AI<\/h3>\n
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Alongside the symposium, SK hynix also participated in the concurrent exhibition, showcasing a wide array of advanced memory solutions. Under the concept of \u201cInvisible Technology that Enables Possibility,\u201d the company placed its key HBM*<\/sup> product lineup front and center, focusing on demonstrating the critical role that SK hynix\u2019s AI memory, invisible from the outside, plays inside products to enable AI.<\/p>\n

*\u00a0<\/sup>HBM (High Bandwidth Memory): A high-value, high-performance product that vertically connects multiple DRAM chips to increase capacity and dramatically improve data processing speed. HBM has evolved through successive generations: HBM, HBM2, HBM2E, HBM3, HBM3E, and HBM4.<\/p>\n

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\u25b2 Visitors exploring the HBM3E section<\/p>\n<\/figure>\n

The HBM3E section drew the most attention at the exhibition. It presented the 12-layer HBM3E mounted inside NVIDIA\u2019s GB300, broken down into three layers to provide a detailed, easy-to-understand explanation of the role HBM plays within actual products. Visitors were seen closely examining the product images displayed at each layer, and many engaged booth staff with questions, showing keen interest.<\/p>\n

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\u25b2 A 3D model showcasing the 16-layer 48GB HBM4 product and its enlarged internal structure<\/p><\/div><\/a>

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\u25b2 A 3D model showcasing the 16-layer 48GB HBM4 product and its enlarged internal structure<\/p><\/div><\/a>

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The HBM4 section, featuring the 16-layer 48GB HBM4 product and a 3D model illustrating its enlarged internal structure, also attracted significant interest. Notably, the product description included the phrase \u201cPowered by base die in TSMC advanced logic,\u201d underscoring the close technological partnership with TSMC.<\/p>\n

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\u25b2 SK hynix\u2019s server DRAM product lineup<\/p><\/div><\/a>

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\u25b2 SK hynix\u2019s server DRAM product lineup<\/p><\/div><\/a>

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The company also showcased its latest server DRAM lineup, demonstrating its unmatched technology leadership. At the exhibition, SK hynix displayed the 256GB 3DS RDIMM*<\/sup>, which delivers the industry\u2019s largest capacity; the 128GB MRDIMM*<\/sup>, optimized for high performance computing environments; and the 64GB RDIMM, the world\u2019s first to apply the 1c-nanometer (1c\u339a) process to maximize power efficiency. These products were presented side by side to highlight the company\u2019s latest lineup targeting the server market. Additionally, the 192GB SOCAMM2*<\/sup> which also features the 1c\u339a process and drew considerable attention as a next generation solution designed specifically for AI servers, delivering low power consumption and high performance in a new form factor.<\/p>\n

*\u00a0<\/sup>RDIMM (Registered Dual In-line Memory Module): A server memory module composed of multiple DRAM chips.
\n*\u00a0<\/sup>MRDIMM (Multiplexed Rank Dual In-line Memory Module): A memory module in which two ranks, the basic operating units of a module, operate simultaneously, significantly improving speed.
\n*\u00a0<\/sup>SOCAMM (Small Outline Compression Attached Memory Module): An AI server optimized memory module based on low power DRAM.<\/p>\n

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\u25b2 HBM burger souvenirs and recipe cards presented by SK hynix at the event<\/p><\/div><\/a>

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\u25b2 HBM burger souvenirs and recipe cards presented by SK hynix at the event<\/p><\/div><\/a>

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The event activities held alongside the exhibition were also a hit with visitors. SK hynix handed out our company swags to visitors who followed its LinkedIn channel, featuring a \u2018burger\u2019 that creatively represented HBM\u2019s intricate stacking structure. The company also distributed cards containing a \u2018Stacking Recipe\u2019 that broke down complex technical concepts in an accessible way, replacing the typical formality of a technology exhibition with a more approachable, friendly atmosphere.<\/p>\n

SK hynix said, \u201cThrough this symposium, we were able to reaffirm our strong partnership with TSMC while broadly communicating the direction of SK hynix\u2019s technological evolution.\u201d The company added, \u201cMoving forward, we will continue to solidify our position as a Full Stack AI Memory Creator, built on our unrivaled technology leadership, and lead the AI era together with our global partners.\u201d<\/p>\n

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