{"id":796,"date":"2026-03-05T00:00:00","date_gmt":"2026-03-05T00:00:00","guid":{"rendered":"http:\/\/localhost:8080\/mwc-2026\/"},"modified":"2026-06-18T10:49:04","modified_gmt":"2026-06-18T10:49:04","slug":"mwc-2026","status":"publish","type":"post","link":"https:\/\/news.skhynix.com\/en\/mwc-2026\/","title":{"rendered":"SK hynix Unveils Latest AI Memory Solutions at MWC 2026, Showcasing Its Technological Capabilities as a Full Stack AI Memory Creator"},"content":{"rendered":"

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SK hynix showcased its latest AI capabilities and key memory solutions at Mobile World Congress 2026 (MWC 2026), held March 2\u20135 in Barcelona, Spain. During the exhibition, the company also engaged with major global partners in the mobile industry to discuss future collaboration.<\/p>\n

MWC 2026, hosted by the Global System for Mobile Communications Association (GSMA), is the world\u2019s largest exhibition focused on the mobile industry. While previous editions of MWC centered on connectivity driven by mobile technologies, this year\u2019s event adopted the theme \u201cThe IQ Era,\u201d reflecting the growing trend of connected devices integrating AI to unlock new possibilities. Reflecting this shift, the exhibition expanded beyond mobile and network technologies to include AI and automotive, offering a broader view of the innovation shaping the future of connected technologies.<\/p>\n

Aligned with this direction, SK hynix placed its key memory solutions for AI and automotive applications throughout the exhibition space, focusing on presenting a clear vision as a Full Stack AI Memory Creator at the forefront of future technologies. The company also worked to strengthen engagement with core partners, gaining insight into the latest technological developments and customer needs while closely monitoring broader market conditions.<\/p>\n

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AI Memory Leadership on Display at the SK hynix Booth<\/h3>\n
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\u25b2 Visitors explore the SK hynix booth<\/p>\n

SK hynix designed its exhibition space around the circular form of the wafer \u2014 the starting point of semiconductor manufacturing \u2014 showcasing its world-class memory semiconductor technologies driving the AI era. The booth combined the solidity of stone materials with flowing curves to create an immersive first impression, while layered circular lighting structures and a large-scale display drew visitors\u2019 attention.<\/p>\n

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\u25b2 SK hynix exhibition space at MWC 2026<\/p>\n

The main exhibition space on the first floor was organized into four zones dedicated to HBM* <\/sup>, AI Datacenter Memory, On-Device* <\/sup> AI memory, and Automotive. The second floor featured meeting rooms and a lounge area.<\/p>\n

* <\/sup>HBM (High Bandwidth Memory): A high-value, high-performance memory product which vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison to conventional DRAM products. There are six generations of HBM, starting with the original HBM followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.
\n* <\/sup>On-Device AI: A technology that implements AI functions on the device itself, instead of going through computation by a physically separated server. A smart device\u2019s direct collection and computation of information allows fast reactions of the AI performance, while promising an improved customized AI service.<\/p>\n

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\u25b2 SK hynix HBM4 (left), HBM3E (right)<\/p>\n

In the HBM zone, SK hynix showcased HBM4, which is adopted in next-generation AI data center server platforms. Featuring 2,048 I\/Os, HBM4 delivers 2.54 times the bandwidth of the previous generation and improves power efficiency by more than 40%, making it well suited for ultra-high-performance AI computing.<\/p>\n

In addition, the company presented its 12-layer HBM3E, which is being used in the latest AI data center GPU modules by global customers, once again demonstrating its leadership in HBM technology.<\/p>\n

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\u25b2 SK hynix\u2019s DDR5-based server DRAM module lineup<\/p>\n

In the AI Datacenter Memory zone, SK hynix introduced DDR5-based module products targeting data center and server markets, along with high-capacity, high-performance eSSD solutions. The DRAM lineup included DDR5 RDIMM* <\/sup>(64GB), built on the world\u2019s first 10-nanometer sixth-generation (1c)* <\/sup> process technology to deliver higher speeds and improved power efficiency; 3DS* <\/sup> DDR5 RDIMM (256GB), designed with increased density to meet the demands of AI environments; and DDR5 MRDIMM* <\/sup>(96GB), offering high capacity and high bandwidth for AI workloads. The company also presented SOCAMM2* <\/sup>(192GB), a next-generation memory module that combines the low-power characteristics of LPDDR5X with high-performance AI modules to enable improved efficiency.<\/p>\n

* <\/sup>RDIMM (Registered Dual In-line Memory Module): A server memory module product in which multiple DRAM chips are mounted.
\n* <\/sup>1c: The 10 nm process technology has progressed through six generations: 1x, 1y, 1z, 1a, 1b, and 1c.
\n* <\/sup>3DS (3D Stacked Memory): A high-performance memory in which two or more DRAM chips are interconnected using TSV technology.
\n* <\/sup>MRDIMM (Multiplexed Rank Dual In-line Memory Module): A product with enhanced speed by simultaneously operating two ranks \u2014 the basic operating units of the module.
\n* <\/sup>SOCAMM (Small Outline Compression Attached Memory Module): A low-power DRAM-based memory module specialized for AI servers, featuring a smaller form factor and greater power efficiency compared to traditional server memory modules.<\/p>\n

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\u25b2 SK hynix\u2019s eSSD lineup for AI data centers<\/p>\n

The eSSD portfolio targeting the AI data center market included PEB210 E1.S (9.5mm), which supports direct liquid cooling (DLC), PS1110 E3.S, optimized for high-performance specifications in compliance with the NVMe* <\/sup> E3.S standard, and PS1101 E3.S, built on QLC* <\/sup> NAND and offering capacities of up to 122TB.<\/p>\n

* <\/sup>NVMe (Non-Volatile Memory Express): A communications interface protocol for PCIe-based non-volatile memory, designed to enable high-speed, high-capacity data processing compared with SATA.
\n* <\/sup>QLC (Quad-Level Cell): NAND flash is classified based on how many data bits can be stored in one cell, the smallest unit of storage. NAND flash is categorized as single-level cell (SLC), multi-level cell (MLC), triple-level cell (TLC), QLC, and penta-level cell (PLC).<\/p>\n

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Expanding Across Mobile and Autonomous Driving Applications<\/h3>\n
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SK hynix broadened its showcase beyond memory solutions for AI and AI data centers to include on-device AI, autonomous driving, and connected car applications in the automotive sector, demonstrating its established technological capabilities as a Full Stack AI Memory Creator.<\/p>\n

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\u25b2 SK hynix\u2019s On-Device AI Memory product lineup<\/p>\n

In the On-Device AI Memory zone, SK hynix drew attention with LPDDR6, the latest product in its LPDDR* <\/sup> lineup. Also on display were UFS* <\/sup> 4.1 (1TB), offering improved performance and power efficiency compared with the previous generation; uMCP* <\/sup> 4.1, which combines 16GB of LPDDR5X and 512GB of UFS; and ZUFS* <\/sup> 4.1, featuring smaller package size compared with the previous version. These products represent the company\u2019s latest offerings across each category.<\/p>\n

* <\/sup>LPDDR (Low Power Double Data Rate): A mobile DRAM designed for low-power operation. The standard includes the prefix \u201cLP,\u201d which stands for \u201clow power.\u201d The LPDDR standard has been developed in the order of LPDDR1, 2, 3, 4, 4X, 5, 5X, and 6.
\n* <\/sup>UFS (Universal Flash Storage): A breakthrough type of flash memory that can simultaneously read and write data. Due to its low-power consumption, high-performance and reliability, UFS is widely applied in mobile devices.
\n* <\/sup>uMCP (Universal Multi-Chip Package): A multi-chip package that combines DRAM and NAND flash into one product.
\n* <\/sup>ZUFS (Zoned Universal Flash Storage): An extended specification of UFS, a high-speed flash memory storage specification for mobile devices such as smartphones and tablets, with improved data management efficiency. It applies Zoned Storage technology, which stores and manages similar data types within the same zone, optimizing data transmission between the operating system (OS) and storage devices.<\/p>\n

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\u25b2 SK hynix\u2019s automotive memory product lineup<\/p>\n

In the Auto zone, SK hynix presented a range of memory solutions designed to support increasingly advanced autonomous driving capabilities. On the DRAM side, the company showcased two products \u2014 Automotive LPDDR6 and Auto\/Robotics LPDDR5\/5X \u2014 both built on the 10-nanometer-class sixth-generation (1c) process technology to improve data transfer speeds and overall performance. On the NAND side, the lineup included Auto UFS 3.1, Auto eMMC 5.1, Auto SSD PA101, and Auto SSD PA201. These storage solutions are designed to meet the demands of autonomous driving technology, which requires high-speed processing of large volumes of data as autonomy levels increase.<\/p>\n

A representative of SK hynix said, \u201cAt MWC 2026, we presented a wide range of memory solutions spanning AI infrastructure, on-device applications, and automotive systems, enabling visitors to experience our brand value and vision firsthand. We will continue to focus on technology development with a forward-looking approach in a rapidly changing environment and aim to strengthen our position as a leading player in the global semiconductor market in the AI era.\u201d<\/p>\n

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