Seoul, December 4, 2006
hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) today announced it has developed the world’s fastest and smallest 512Megabit mobile DRAM. This product meets JEDEC standards and operates at 200MHz – the fastest in the industry.
By using 32-bit wide I/Os, hynix’s 512Mb mobile DDR SDRAM processes 1.6Gbytes (400 bps x32) of data per second, which is approximately 1.5 times faster than speed of the company’s existing mobile DRAM products.
hynix says “The product will deliver the memory capacity and speed required for third generation mobile phones that provide new services, such as DMB (Digital Media Broadcast), to subscribers.” The new product is expected to enhance the Company’s competitiveness in mobile applications, which is driving the trend towards miniaturization(8mm x 10mm). Moreover, hynix is expected to combine 512Mb mobile DRAM and NAND Flash in a multi-chip package (MCP), which will enable the design of slimmer mobile phones.
hynix says “We are almost at a final stage of receiving the world’s first validation from a major mobile chipset company.” hynix plans to lead JEDEC standards in mobile products in the future With the launch of the 512Mb mobile DRAM, hynix has proved its technology leadership.
The company will continue to enhance the development and marketing of mobile DRAM products that meet customers’ demands for higher speeds, larger capacity and lower power, in small form factor packages.
About hynix Semiconductor Inc.
hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.
