– Earns annual sales of $2-300 million
HEI (President: Kim, Young Hwan) developed the low voltage 4M SRAM (Static Random Access Memory), and displayed its commercial sample recently. The 4M SRAM, developed by HEI, is being highly received by the world-famous communication companies such as Motorola and Nokia, due to its high quality: the width of circuit is 0.25 micron, with the size of chip reduced by more than a half; it works under the voltage as low as 1.8 v. HEI aims at total sales of $50 million this year by producing two million 4M SRam per month starting from the fourth quarter and annual sales of $300 million by expanding the volume of production into five million per month in the year 2000. The price is expected to be $10 this year, and going to be $5-7 next year. According to the worldly known market research institute, Data Quest, the size of the market for SRAM recorded $3.7 billion in 1998, and it will be expanded to $10 billion in 2001 by growing 30% per year thereafter. Especially, the products for communication equipment HEI concentrates on is expected to occupy 50% of the market share in the whole SRAM market. HEI is expected to rise as a world-class corporation occupying 10% in the SRAM market, the second largest memory market next to DRAM, by developing and releasing 4M SRAM which is expected to be main force product in the market of SRAM for communications after 2000 at an early stage, and by producing 8M SRAM in the first quarter of 1999. The 4M SRAM of HEI operates at a speed of 85 nanosecond under the voltage as low as 1.8 v, and at a speed of 55 nanosecond under the voltage of 3 at the same time. Therefore, it could be adapted to the portable multi media instruments such as IMT 2000 terminal and Iridium (mobile communications via satellite), since it has a wide range of voltage selection and consumes power less (4 microampere) on stand by. Also, it is suitable for the next generation mobile communication equipment that has been getting smaller and lighter, since it reduced the size of chip by more than a half compared to the products that applied the circuit width of 0.32 micron and adopted a small-sized micro BGA package.
