Las Vegas, a city of cutting-edge technology where colorful neon signs and massive media facades light up around the clock. On May 18 (local time), the eyes of global IT leaders once again turned to The Venetian Expo at the heart of the city. Having established itself as a hub for technological innovation by hosting world-class exhibitions including CES, the venue marked the opening of Dell Technologies World 2026 (DTW 2026), kicking off a three-day journey.
At this conference, which serves as a barometer for global AI technology trends, SK hynix showcased a comprehensive lineup of next-generation AI memory solutions, including its key HBM1 products. The company focused on demonstrating its overwhelming technological capabilities as a full-stack AI memory creator. Leveraging a strong foundation of trust built with its key partner Dell Technologies (hereinafter Dell), SK hynix also presented a future blueprint for expanding the AI ecosystem, setting the tone for the exhibition.
1HBM (High Bandwidth Memory): A high value, high performance product that vertically connects multiple DRAM chips to increase capacity and dramatically enhance data processing speeds. HBM has been developed in sequence: 1st generation (HBM), 2nd generation (HBM2), 3rd generation (HBM2E), 4th generation (HBM3), 5th generation (HBM3E), and 6th generation (HBM4).
SK hynix Expands Its Influence Across the AI Infrastructure Landscape
Visitors exploring the SK hynix exhibition booth at DTW 2026
SK hynix designed its booth using black and copper tone to create an atmosphere that projects confidence and expertise. In particular, the booth design featured alternating black and copper panels stacked to evoke a semiconductor layering structure. Combined with the company’s cutting-edge product lineup, the design was praised for visually embodying the scalability of SK hynix’s memory technology as a full-stack AI memory creator poised to lead the AI era.
The HBM section showcasing SK hynix’s key HBM lineup
The first stop for visitors was the HBM section at the center of the booth. Here, actual units of 16-layer and 12-layer HBM4, as well as 12-layer HBM3E were on display, showcasing SK hynix’s unrivaled HBM technological capabilities. GPU system models for the latest AI data center servers from global customers were also placed alongside, allowing visitors to closely examine the memory solutions serving as the core driving force behind AI computing.
SK hynix’s Server DRAM products featured at the exhibition
The AI Data center Memory section on the right side of the booth welcomed visitors with key memory solutions designed to support the infrastructure of the AI era.
On the right display stand, major Server DRAM products packed with the latest technologies were introduced: 192GB SOCAMM22, a new form factor delivering improved power and space efficiency; 256GB 3DS3 RDIMM4, which offers industry’s largest capacity optimized for AI workloads; 64GB RDIMM, built on the world’s first 10-nanometer sixth-generation (1c)5 process technology to boost processing speeds and maximize power efficiency; 96GB RDIMM, designed for memory-intensive AI server workloads; and CMM (CXL6 Memory Module)-DDR5, featuring a next-generation interface. Visitors stopped by and spent considerable time to closely examine the products and explore the broad technology spectrum of SK hynix.
2SOCAMM (Small Outline Compression Attached Memory Module): An AI server-specialized memory module based on low-power DRAM.
33DS (3D Stacked Memory): High-performance memory that vertically connects two or more DRAM chips using TSV (Through-Silicon Via).
4RDIMM (Registered Dual In-line Memory Module): A server memory module composed of multiple DRAM chips.
5The 10-nanometer (nm) class process technology has progressed sequentially through generations 1x, 1y, 1z, 1a, 1b, and 1c (6th generation).
6CXL (Compute Express Link): A next-generation interface that efficiently connects CPUs/GPUs, memory, and other components in high-performance computing systems to support high-capacity, ultra-high-speed processing.
SK hynix’s eSSD products featured at the exhibition
On the left display stand, a diverse range of eSSD products were exhibited side by side, including the PEB210 E1.S 9.5mm, an industry first to support Direct Liquid Cooling (DLC), and the PS1110 E3.S, optimized for high-end performance in the NVMe7 E3.S form factor. Also on display were the PS1010 E3.S, PS1101 E3.S, PEB110 E1.S 15mm, PEB210 E1.S 15mm, and PEB210 M.2, demonstrating SK hynix’s high-performance storage solution capabilities to meet any customer requirement.
7NVMe (Non-Volatile Memory Express): A communication protocol for non-volatile memory based on the PCIe interface. Compared to the conventional SATA interface, it is optimized for ultra-high-speed, high-capacity data processing.
SK hynix’s 64GB DDR5 RDIMM and PS1010 E3.S
Between the two display stands, a Dell server system (R7625) was exhibited alongside SK hynix’s Server DRAM 64GB DDR5 RDIMM and eSSD PS1010 E3.S, which are installed in the server. This not only highlighted the strong partnership between the two companies, but also clearly demonstrated that SK hynix’s AI memory solutions play a pivotal role in building actual AI data centers.
From Servers to AI PCs ㅡ SK hynix Shines Everywhere
SK hynix’s cSSD products featured at the exhibition
In the cSSD section on the left side of the booth, the PQC21 M.2 2230, currently being supplied to Dell since April this year, generated massive interest [Related Article]. Built on 321-layer QLC8 NAND, the product maximizes storage capacity per unit area and secures high performance through SLC caching9 technology, earning recognition as a next-generation storage solution optimized for AI PC environments. The product lineup also included the PCB01 M.2 2280, PVC10 M.2 2230, and PVF01 M.2 2230.
8QLC: NAND flash memory is classified based on the number of bits stored per cell (the smallest unit of storage): SLC (Single Level Cell, 1 bit), MLC (Multi Level Cell, 2 bits), TLC (Triple Level Cell, 3 bits), QLC (Quadruple Level Cell, 4 bits), and PLC (Penta Level Cell, 5 bits).
9SLC Caching: A technology that adjusts the number of storage bits per cell in NAND flash to utilize certain areas as SLC, writing data quickly first and then re-storing it in the original format. This particularly enhances write performance.
SK hynix’s PC DRAM products featured at the exhibition
Across from the cSSD section, the PC DRAM section showcased a strengthened portfolio, including: CSODIMM10 (32GB/48GB), which delivers high capacity in a thinner, smaller form factor better suited for AI PC environments; LPCAMM211 (64GB), which bundles multiple LPDDR5X12 devices into a single module to deliver high speed and power efficiency even in low-power environments; LPDDR6 (16GB), the latest LPDDR product; and GDDR7 (2GB/3GB), primarily used for video and graphics workloads in AI PC environments.
10CSODIMM (Compression Attached Small Outline DIMM): A next-generation memory module designed in a thinner, smaller form factor than conventional SODIMM, enabling high-capacity implementation for AI PCs and high-performance laptops.
11LPCAMM2 (Low-Power Compression Attached Memory Module): A module based on LPDDR5X that delivers performance equivalent to two DDR5 SODIMM modules (used in laptops and small-form-factor PCs), while enabling space savings along with low power consumption and high performance.
12LPDDR: The latest mobile DRAM product with low-power operating characteristics. The name is prefixed with LP (Low Power), and the product has been developed in sequence: LPDDR1, 2, 3, 4, 4X, 5, 5X, and 6.
At the exhibition, SK hynix also highlighted its recognition as one of the World’s Most Ethical Companies in 2026.
Through this exhibition, SK hynix also widely promoted its recognition as one of the World’s Most Ethical Companies® (WMEC) in 2026 by global ethics evaluator Ethisphere [Related Article]. Following its inaugural recognition last year as the first Korean semiconductor company to be named to the WMEC list, SK hynix earned the distinction for a second consecutive year, once again proving its value not only as a technology leader but as a trusted global company.
“Leading the AI Era Through Technology Innovation Based on Strategic Partnerships”
Technical Leader Cheolhoon Yang of NAND Product Planning and Technical Leader Hyunsoo Kang of NAND Product Planning presenting at the session
The excitement from the exhibition extended to the technical sessions held in the conference rooms. Cheolhoon Yang, Technical Leader of NAND Product Planning, and Hyunsoo Kang, Technical Leader of NAND Product Planning, took the stage at the Breakout Session on the first day of the event (May 18, local time), delivering a presentation titled “Enterprise and Client SSD Industry Trends and Portfolio for Dell.”
The two speakers emphasized the importance of high-capacity and high-performance storage to efficiently manage the explosive growth of data in the AI era. Yang highlighted the “evolution of form factors” and “advancement of cooling technologies” as key technical directions for maximizing the efficiency of memory solutions used in AI data centers, and introduced various ongoing technology innovation initiatives in the eSSD domain at SK hynix. Kang then shared the roadmap of developing next-generation cSSDs suited for on-device AI environments.
SK hynix stated that through the DTW 2026, the company has once again confirmed its stance as a full-stack AI memory creator that drives the limitless expansion of the AI ecosystem, alongside Dell and various other customers. Moving forward, SK hynix lead the AI era as a ‘strategic partner’ that proactively addresses customer pain points, transcending the role of a mere component supplier.
