HERITAGE OF TECHNOLOGY
2026. 01
2025. 12
2025. 09
2025. 08
2023. 10
2023. 08
2023. 05
2023. 04
2021. 04
SK hynix Begins Mass Production of the Industry's Highest-Performance Enterprise SSD
2021. 03
SK hynix Begins Mass Production of the Industry’s Highest-Capacity LPDDR5 Mobile DRAM
2019. 03
 DDR4 D램.jpg)
2018. 11
2018. 02
SK hynix Begins Customer Qualification of Next-Generation PCIe eSSD Based on 4th-Generation (72-Layer) 3D NAND
2018. 02
 3D 낸드 기반 4TByte 기업용 SATA SSD 개발.jpg)
2012. 06
2011. 03
hynix Semiconductor Develops the World’s Highest-Capacity DRAM Using TSV Technology
2009. 08
2009. 04
2009. 03
2009. 01
hynix Semiconductor Secures Intel Certification for the World’s Fastest 4GB ECC UDIMM Module for DDR3 Servers
2008. 12
hynix Semiconductor Develops the World’s First Ultra-Compact Server Module with Wafer-Level Packaging
2008. 06
hynix Semiconductor Develops the World’s First 32Gb NAND Flash Memory Based on Triple-Level Cell (X3) Technology
2008. 02
hynix Semiconductor Develops High-Performance 8GB DDR2 Server Memory Module Based on 2-Rank Architecture with MetaRAM
2007. 08
2007. 05
hynix Semiconductor Develops the Industry’s First Ultra-Thin 20-Layer NAND Flash MCP
2007. 04
hynix Semiconductor Begins Full-Scale Mass Production of Fusion Memory DOC H3
2007. 03
2007. 01
hynix Semiconductor Develops a High-Speed Memory Module Using Advanced Wafer-Level Packaging Technology
2006. 03
hynix Semiconductor Secures the Industry’s First Intel Certification for 80nm DDR2 DRAM
2005. 12
2005. 07
2005. 06
hynix Semiconductor Secures the Industry’s First Certification for Fastest 1GB DDR2-800 Module
2005. 01
hynix Semiconductor Develops an x8-Based Server Memory Module with 30% Reduced Power Consumption
2003. 12
2003. 03
2001. 06
2001. 02
2001. 01
HEI Develops Ultra-High-Speed 512Mb DDR SDRAM
2000. 04
HEI Successfully Commercializes Ferroelectric Memory (FeRAM)
1998. 12
HEI Successfully Develops and Exports the World’s First Mass Production Technology for Photoresist for 4Gb DRAM
1998. 10
HEI Develops 4th-Generation 64Mb SDRAM
1998. 09
HEI Develops 64Mb DDR SDRAM
1993. 08
HEI Develops 1Mb Fast SRAM
1993. 07
HEI Begins Pilot Production of 16Mb DRAM (FAB IV)
1992. 09
HEI Develops 64Mb DRAM Prototype under National Project
1991. 04
HEI Begins Mass Production of 4Mb DRAM
1991. 03
HEI Develops 16Mb DRAM
1991. 02
HEI Develops 16Mb DRAM Prototype under National Project
1989. 09
HEI Develops 4Mb DRAM
1989. 08
HEI Develops 256K Fast SRAM
1988. 06
HEI Develops 256K Slow SRAM
1986. 09
HEI Jointly Develops 4Mb DRAM under National Project
1985. 05
HEI Begins Mass Production of 16Kb SRAM
