Press Release

hynix First to Receive Intel Validation for its 512 Mbit DDR400

By June 17, 2003 October 31st, 2019 No Comments

Seoul, Korea, June 17, 2003

Today, hynix Semiconductor Inc. (hynix,www.hynix.com) announced it has received DRAM industry’s first Intel validation for 512Mb DDR400 component and 512Mb DDR400 based modules.

The hynix 512Mb DDR400 Intel validation follows its 256Mb DDR400 Intel Validation in February and further demonstrates hynix’s advanced process technology and leadership position in the high-speed DDR memory market.

http://www.intel.com/technology/memory/ddr/valid/dram_results.htm
http://www.intel.com/technology/memory/ddr/valid/dimm_results.htm

hynix projects a continued surge in demand for DDR400 memory products throughout this year as the PC industry quickly adopts Intel’s Springdale and Canterwood chipsets supporting DDR400 architecture.

According to Farhad Tabrizi, Vice President of Worldwide Marketing, hynix expects DDR400 to represent more than 35 percent of the overall DDR market by end of 2003 and hynix is taking additional steps to expand its production capacity of DDR400 to 90 percent from its initial target of 60 percent by year-end.

Currently, DDR products account for more than 80 percent of the company’s total DRAM production. hynix is dedicating its efforts on developing value-added high-performance DDR products which include DDR400, DDR2 and GDDR2/3 and maintaining a leading position in the next generation memory market through its advanced process technology and cost-competitiveness.

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