Press Release

hynix Semiconductor Develops 1M FeRAM

By May 4, 2001 February 10th, 2022 No Comments

Seoul, Korea, May 4, 2001 hynix Semiconductor Inc. (HSI; formerly Hyundai Electronics Industries [HEI]) announced yesterday that it had developed a 1M ferroelectric RAM (FeRAM), the next-generation memory semiconductor.

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Seoul, Korea, May 4, 2001

hynix Semiconductor Inc. (HSI; formerly Hyundai Electronics Industries [HEI]) announced yesterday that it had developed a 1M ferroelectric RAM (FeRAM), the next-generation memory semiconductor. Operating in the 3V-to-5V range at the speed of 100ns (1ns = 1/ 1 billion second), the 1M FeRAM utilizes 0.35-micron process technology. Equally significant, instead of two transistors and capacitors respectively, this chip consists of only one transistor and capacitor apiece, significantly reducing chip size. In addition, the chip uses SBT (Strontium Bismuth Tantalite) and other newly developed substances as ferroelectric material. To date, commercial FeRAMs have been hindered by uncertain product reliability. This highly stable 1M FeRAM from hynix represents an important step in the commercialization of a high-capacity chip. FeRAM is a non-volatile memory that combines the capacity of DRAM, the speed of SRAM, and the data retention capabilities of flash memory. Compared with flash memory and EEP ROM (Electrically Erasable & Programmable Read Only Memory), FeRAM uses less voltage during operation and writes data 1,000 times faster. Currently, only low-capacity FeRAMs (e.g., 64K and 256K) are produced by a small number of chip makers for application in lower-capacity memory and complex logic chips. Aimed at the mobile phone and smart card markets, this new 1M device from hynix is expected to meet the rapidly growing demand for FeRAM. Moreover, Hynix will continue to develop next-generation, high-integration FeRAM products in order to further strengthen its position in the FeRAM market. ### About hynix Semiconductor Inc. hynix Semiconductor Inc. (hynix) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors (including DRAM, SRAM, Flash memory and system IC devices), telecommunications and liquid crystal displays. The Semiconductor Group at hynix is the world’s largest DRAM supplier with 11 semiconductor manufacturing facilities worldwide and production capacity of over 300,000 wafer starts per month. In addition, hynix is expanding its system IC business unit with leading technology and added deep-submicron foundry services. hynix continues to broaden its overall semiconductor presence with a goal of becoming the global semiconductor market leader. Based in Korea, hynix maintains development, manufacturing, sales and marketing facilities strategically located worldwide. More information on hynix Semiconductor Inc. and its products is available from the company’s web site at www.hynix.com.