Press Release

SK hynix and Toshiba Sign Joint Development for NIL

By February 5, 2015 December 7th, 2020 No Comments

SEOUL, Korea, February 5th, 2015

SK hynix Inc. ( today announced that it has signed an agreement on ‘Joint Development for Nano Imprint Lithography (or ‘NIL’)’ with Toshiba, a Japanese memory chip maker. This agreement builds on a MOU that two companies signed in December last year.

Two companies will start to develop the NIL technologies at Toshiba’s Yokohama Complex in Yokohama, Japan from April this year and the practical adoption is expected to start in 2017.

NIL has been recognized as one of the next generation lithography techniques for implementing high throughput patterning at low costs unlike the traditional lithography methods. The memory semiconductor industry has demonstrated and developed many process technologies including EUV(Extreme Ultraviolet) in order to overcome technology limitations and NIL as one of the process technologies can achieve resolutions beyond the limitations.

SK hynix and Toshiba expect that this collaboration will enable the two parties to successfully develop the NIL by minimizing risk and move up commercialization of this technology. Also once it is successfully commercialized, it is expected to make a significant contribution to the acceleration of cost competitiveness.

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (‘DRAM’), Flash memory chips (‘NAND Flash’) and CMOS Image Sensors (‘CIS’) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at



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