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SK hynix Showcases Unrivaled AI Memory Leadership at GTC 2025

SK hynix showcased leading AI memory at NVIDIA GTC 2025, debuting in-development 12-layer HBM4 and displaying HBM3E, GDDR7, eSSDs, data center and on-device solutions, and automotive memory, emphasizing its AI era leadership.
TECH&AI
SK hynix Showcases Unrivaled AI Memory Leadership at GTC 2025

SK hynix is showcasing its cutting-edge AI memory technologies at GPU Technology Conference (GTC) 2025 held in San Jose from March 17–21.

Hosted annually by NVIDIA, GTC is one of the world’s leading AI conferences. This year’s event, held under the theme “What’s Next in AI Starts Here,” features over 1,000 sessions and 300 exhibitions highlighting the latest advancements and solutions in AI technology.

At the conference, SK hynix is presenting a booth under the theme “MEMORY, POWERING AI and TOMORROW,” showcasing memory products that accelerate AI innovation. These products are displayed in four sections: AI/Data Centers (DC), HBM* , On-Device, and Automotive. In particular, the HBM section debuted a model of the 12-layer HBM4, which is currently under development, demonstrating the company’s overwhelming technological leadership.

* High Bandwidth Memory (HBM): A high-value, high-performance product that significantly enhances data processing speeds by vertically stacking multiple DRAM chips, surpassing the capabilities of traditional DRAM. HBM has evolved through six generations, starting with the original HBM and followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.

The AI/DC section features enterprise SSDs (eSSDs) optimized for large-scale data processing and storage, including PEB110, PS1010, and PEB9010, alongside data center DIMM* products such as DDR5 RDIMM and MRDIMM. The world’s highest-specification graphics memory, GDDR7* , is also on display. Additionally, next-generation AI memory products are drawing attention, including CMM-DDR5* , a DDR5-based CXL* product, and SOCAMM* , a low-power DRAM module for AI servers. The company plans to begin mass production of SOCAMM in line with the market’s emergence, leveraging its strengths in LPDDR5X* and server memory to expand its AI memory portfolio.

* Dual In-line Memory Module (DIMM): A module in which multiple DRAM chips are combined on a substrate.
* Graphics DDR (GDDR): A standard specification of graphics DRAM defined by JEDEC and specialized for processing graphics more quickly. It is now one of the most popular memory chips for AI and big data applications.
* CXL Memory Module-DDR5 (CMM-DDR5): A next-generation DDR5 memory module utilizing CXL technology to boost bandwidth and performance for AI, cloud, and high-performance computing.
* Compute Express Link (CXL): A next-generation interface that efficiently connects CPUs/GPUs and memory in high-performance computing systems, supporting large-scale, ultra-fast computations. Applying CXL to existing memory modules can expand capacity by more than 10 times.
* Small Outline Compression Attached Memory Module (SOCAMM): A next-generation memory module based on LPDDR5X, featuring a smaller form factor than traditional server memory modules while offering higher power efficiency.
* Low Power Double Data Rate 5X (LPDDR5X): Low-power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and featuring low voltage operation. LPDDR5X is the seventh-generation LPDDR product.

The highlight of the HBM section is undoubtedly HBM4. Unveiled for the first time in the world at GTC 2025, the in-development HBM4 is set to offer significantly enhanced base die performance and vastly reduced power consumption. Following the introduction of this latest AI memory solution, HBM4, SK hynix will further strengthen its industry leadership. Additionally, the company is showcasing the industry’s best-performing and highest-capacity 12-layer HBM3E available today, alongside NVIDIA’s GB200 GraceTM Blackwell Superchip.

Visitors to the On-Device section can explore the company’s high-performance, low-power memory solutions designed for on-device data processing and AI computing. These include LPDDR6, LPCAMM2* , PCB01, and ZUFS* 4.0.

* Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.
* Zoned Universal Flash Storage (ZUFS): An advanced version of UFS that improves data management efficiency by organizing data into zones, optimizing transfer between the operating system and storage device.

Meanwhile, at the Automotive section, SK hynix is presenting a range of vehicle memory solutions aimed at advancing the era of autonomous mobility. These include HBM2E, LPDDR5, UFS* 3.1, and Gen4 SSD tailored for the automotive industry.

* Universal Flash Storage (UFS): A breakthrough type of flash memory that can simultaneously read and write data. Due to its low-power consumption, high-performance and reliability, UFS is widely applied in mobile devices.

As well as its exhibition at GTC 2025, SK hynix has also prepared a virtual booth. Online visitors can browse a web brochure detailing the company’s achievements in 2024 and information on key products including server solutions, the high-capacity SSD PS1012, GDDR7, and CMM-DDR5. Furthermore, there are also videos of innovative products such as HBM, 1c DDR5* , and automotive memory, emphasizing SK hynix’s technological leadership.

* 1c DDR5: A 16 gigabit DDR5 DRAM built using the 1c node, the sixth generation of the 10 nm DRAM process. The 10 nm DRAM process was developed in the order of 1x-1y-1z-1a-1b-1c. In October 2024, SK hynix became the first in the world to successfully develop the 1c DDR5 DRAM.

▲ Jungsoo Park of HBM Product Planning presenting on the importance of HBM in the AI era

The company also shared its insights with industry professionals during the event’s presentation sessions. Technical Leader Jungsoo Park of HBM Product Planning presented on “HBM: Backbone of High-Performance Computing and AI,” highlighting the evolution of HBM technology and SK hynix’s unrivaled leadership in the field.

▲ Kihong Kim of Mobility Business giving a talk on SK hynix’s automotive memory

Meanwhile, in an online session titled “Preparing for the Future: Automotive Memory and Storage Requirements”, Technical Leader Kihong Kim of Mobility Business introduced the characteristics of memory and storage in the automotive industry and SK hynix’s related strategic approach.

As AI technology continues its rapid evolution, the role of memory is becoming increasingly vital. At GTC 2025, SK hynix is underlining its AI memory leadership by introducing solutions optimized for the AI era. Looking ahead, the company will further strengthen collaboration with global AI companies to remain at the forefront of AI memory innovation.