Seoul, Korea – January 13th, 2010
hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced that it has developed the world’s first 2Gb(Gigabit) Low Power DDR2 DRAM for mobile applications using the company’s leading edge 40nm class process technology.
This product works at 1,066 Mbps(Megabits per second), which is the fastest speed among the current mobile DRAM solutions and provides a high density mobile DRAM solution in MCP(Multi Chip Package) or PoP(Package on Package) types. The device operates at such a low voltage of 1.2V and processes up to 4.26GB(Gigabytes) of data per second with a 32-bit I/O, providing high bandwidth. It consumes 50% less power than existing mobile memory solution’s case.
The product meets JEDEC standards and is designed for the use in the next generation Smartphone, Smartbook and Tablet PC applications. hynix plans to start volume production of this product in the first half of this year in order to satisfy the increasing demand on high density mobile DRAMs for high performance mobile applications.
Since its first introduction of 2Gb mobile DDR using 50nm class process technology in 2008, also a world’s first, hynix has been positioning itself as a technology leader in Mobile DRAMs and a major supplier for a wide range of mobile applications.
hynix plans to maintain its competitiveness in a diversified product line-up and capitalize on its technology leadership in the future.
About hynix Semiconductor Inc.
hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.
Media Contact
SK hynix Inc.
CORPORATE COMMUNICATIONS
Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com
