hynix First to Receive Intel Validation for its 512 Mbit DDR400 June 17, 2003 PRESS 512 DDR400 Intel Mbit
hynix to Launch Volume Production of Ultra-Low Power 256 Mb SDRAM May 29, 2003 PRESS 256 MB SDRAM Ultra-Low Power
hynix to Launch Production on ITS 0.10-micron Process Technology May 12, 2003 PRESS 0.10-micron ITS Technology
hynix Semiconductor Announces Agreement with STMicroelectronics to Cooperate in NAND Flash Memories April 24, 2003 PRESS AGREEMENT Flash Memories NAND semiconductor STMicroelectronics
hynix Calls U.S. Commerce Department Preliminary Determination in Subsidy Trade Case ”Disappointing and Unjustified on the Facts and the Law” April 2, 2003 PRESS Case U.S.
hynix Semiconductor Manufacturing America Announces $100 mil. Investment to Upgrade Eugene, Oregon Facility March 13, 2003 PRESS America Investment semiconductor
hynix Introduces World’s First Commercially Applicable Mega-level FeRAM, a Major Industry Milestone March 10, 2003 PRESS FeRAM Mega-level
hynix Carries Out Aggressive Restructuring to Enhance Competitiveness March 5, 2003 PRESS Restructuring
hynix to Rollout 400Mhz DDR to Coincide Intel Springdale Launch February 20, 2003 PRESS 400Mhz DDR Intel