hynix Says U.S. ITC Decision On DRAM Case Is “Very Disappointing,” But It Will Not Affect hynix’s Overall Business Operation Worldwide July 24, 2003 PRESS Case DRAM ITC
hynix First to Receive Intel Validation for its 512 Mbit DDR400 June 17, 2003 PRESS 512 DDR400 Intel Mbit
hynix to Launch Volume Production of Ultra-Low Power 256 Mb SDRAM May 29, 2003 PRESS 256 MB SDRAM Ultra-Low Power
hynix to Launch Production on ITS 0.10-micron Process Technology May 12, 2003 PRESS 0.10-micron ITS Technology
hynix Semiconductor Announces Agreement with STMicroelectronics to Cooperate in NAND Flash Memories April 24, 2003 PRESS AGREEMENT Flash Memories NAND semiconductor STMicroelectronics