hynix to Launch Volume Production of Ultra-Low Power 256 Mb SDRAM
May 29, 2003
PRESS
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hynix to Launch Production on ITS 0.10-micron Process TechnologyMay 12, 2003 -
hynix Says EC Decision Ignores Real FactsApril 25, 2003
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hynix Semiconductor Announces Agreement with STMicroelectronics to Cooperate in NAND Flash MemoriesApril 24, 2003
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hynix Calls U.S. Commerce Department Preliminary Determination in Subsidy Trade Case ”Disappointing and Unjustified on the Facts and the Law”April 2, 2003
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German Patent Office Cancels Rambus’ German Utility ModelMarch 29, 2003
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hynix Semiconductor Manufacturing America Announces $100 mil. Investment to Upgrade Eugene, Oregon FacilityMarch 13, 2003
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hynix Introduces World’s First Commercially Applicable Mega-level FeRAM, a Major Industry MilestoneMarch 10, 2003 -
hynix Carries Out Aggressive Restructuring to Enhance CompetitivenessMarch 5, 2003
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hynix to Rollout 400Mhz DDR to Coincide Intel Springdale LaunchFebruary 20, 2003
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hynix Receives Validation from Intel for ITS 333Mbps High-speed 512Mb DDR SDRAMJanuary 21, 2003
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hynix Says ITC’s Preliminary Investigation Lays Foundation for Victory in Final StageDecember 14, 2002