SK hynix Honored with Gold Tower Order and Presidential Citation at the 61st Invention Day Ceremony, Proving AI Memory Technological Leadership
May 20, 2026
4D NAND
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[One-Team Spirit] The Miracle of 321 Layers? How SK hynix’s Determination Propelled Its Rise to NAND Flash LeadershipJuly 7, 2025 -
SK hynix Develops UFS 4.1 Solution Based on 321-High NANDMay 21, 2025 -
SK hynix Starts Mass Production of World’s First 321-High NANDNovember 21, 2024 -
New Leadership Spotlight: SK hynix’s Youngest Exec, Lee Donghun, Discusses Spearheading NAND Flash DevelopmentFebruary 14, 2024 -
[Tech Pathfinder] How SK hynix’s Advanced 4D NAND Technologies Are Overcoming Stacking LimitationsDecember 19, 2023 -
FMS 2023: SK hynix Showcases World’s First 321-Layer NAND Samples & Storage SolutionsAugust 16, 2023 -
SK hynix Showcases Samples of World’s First 321-Layer NANDAugust 8, 2023 -
SK hynix Begins Mass Production of Industry’s Highest 238-Layer 4D NANDJune 8, 2023 -
SK hynix Unlocks NAND Memory Potential with Innovative Products at FMS 2022August 5, 2022 -
SK hynix Develops World’s Highest 238-Layer 4D NAND FlashAugust 2, 2022 -
Flashback : The Evolution of NAND Flash TechnologySeptember 23, 2020