SK hynix shared its technology roadmap, solution strategies, and AI cloud vision for leading the AI era at HPE Discover Las Vegas 2025 held from June 23–26.
HPE Discover is a global technology conference hosted by Hewlett Packard Enterprise (HPE). This year’s Las Vegas event highlighted the arrival of the AI era and its future possibilities. The conference featured a wide range of technical presentations, a networking program with demos and exhibitions, and hands-on training sessions such as the Tech Pro University and AI Developer Workshop.
SK hynix’s booth at HPE Discover Las Vegas 2025
SK hynix showcased its technological leadership through presentations and exhibitions highlighting its next-generation AI memory, server, and storage solutions essential for developing AI infrastructure. The exhibition was divided into four key sections: HBM1 , Server DIMM2 , eSSDs3 and CMM (CXL4 Memory Module)-DDR5. Each section of the booth, which featured eye-catching designs including product mascots, presented key products and solutions.
1High Bandwidth Memory (HBM): A high-value, high-performance product that significantly enhances data processing speeds compared to conventional DRAM by vertically stacking multiple DRAM chips. There are six generations of HBM, starting with the original HBM and followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.
2Dual In-line Memory Module (DIMM): A standard memory module commonly used in computing systems such as servers. It is classified into various types based on transfer speed, capacity, and structural design.
3Enterprise Solid State Drive (eSSD): An enterprise-grade SSD used in servers and data centers.
4Compute Express Link (CXL): A next-generation, open industry-standard interconnect designed to seamlessly link CPUs, GPUs, memory, and other components within high-performance computing systems. It enables large-scale, ultra-high-speed operations. Applying CXL technology to traditional memory modules can expand their capacity by up to 10 times.
The HBM section featuring industry-leading HBM4 and HBM3E products
At the HBM section, SK hynix displayed its 12-layer HBM4 and 12-layer HBM3E products. Capable of processing more than 2 terabytes (TB) of data per second, HBM4 offers industry-leading speed optimized for AI memory. In March 2025, the company reaffirmed its AI memory leadership by becoming the first in the industry to supply existing major customers with 12-layer HBM4 samples.
Meanwhile, the company’s HBM3E offers a capacity of 36 GB, making it the highest-capacity HBM product available on the market to date. Amid the growing demand for high-capacity memory to support massive data processing, SK hynix became the first in the industry to begin mass production of the 12-layer HBM3E in September 2024. As well as expanding the supply of HBM3E, SK hynix plans to further strengthen its partnership with global customers through the timely development and delivery of HBM4 to meet customer demand.
The Server DIMM section introducing a range of high-performance DDR5-based memory modules
The Server DIMM section featured a lineup of DDR5-based memory modules for the next-generation server market. Products with various form factors were on display, including RDIMM5 and MRDIMM6, which leverage the 1c7 node — the sixth generation of 10 nm process technology. In particular, Tall MRDIMM is noted for its increased height compared to standard MRDIMM solutions, enabling higher capacity. Offering a capacity of up to 256 GB and maximum speeds of 12.8 Gbps, SK hynix’s Tall MRDIMM is a next-generation solution optimized for high-density server environments. The section also included SOCAMM, a high-density memory module based on LPDDR5X which combines low-power consumption with high performance — highlighting how SK hynix’s memory portfolio is ideal for high-performance computing (HPC) and AI workloads.
5Registered Dual In-line Memory Module (RDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate.
6Multiplexed Rank Dual In-line Memory Module (MRDIMM): A server memory module product in which multiple DRAM chips are mounted on a substrate. Speed is enhanced by operating two ranks — the basic operating units of the module — simultaneously.
71c: The 10 nm DRAM process technology has progressed through six generations: 1x, 1y, 1z, 1a, 1b, and 1c. In August 2024, SK hynix became the first in the world to successfully develop 1c process technology.
The eSSD section featuring advanced storage solutions including the PS1010
In the eSSD section, SK hynix presented a range of eSSDs, including its PS1010, PE1010, PE9010, and SE5110, that meet varying server environments and performance requirements. The company demonstrated the PS1010 on an HPE ProLiant server, showcasing the product’s performance and reliability in real-world applications as well as SK hynix’s strong partnership with HPE. As a 176-layer high-performance eSSD based on 4D NAND that supports the PCIe8 5.0 interface, the PS1010 is optimized for AI computing and data center environments.
8Peripheral Component Interconnect Express (PCIe): A high-speed serial interface used by a computer’s motherboard for input and output with digital devices.
The CMM-DDR5 section highlights the scalability and efficiency of CXL memory
The CMM-DDR5 section highlighted the scalability and efficiency of CXL-based memory modules. Compared to conventional configurations, CMM-DDR5 offers 50% greater capacity and 30% more bandwidth. By integrating CMM-DDR5 into the Intel’s Granite Rapids-SP (GNR-SP) platform server, SK hynix demonstrated the product’s real-world applicability and system scalability. Additionally, the company emphasized its competitive edge, highlighting superior performance and cost efficiency over traditional standalone memory configurations.
SK hynix’s Alex Kim (first photo), SK hynix America’s Annie Yuan (second photo), and HPE’s Erik Grigson (third photo), delivering a breakout session on handling AI workloads
As well as introducing its products, SK hynix also delivered two presentations covering CXL and eSSD technology. In a breakout session, the company held a joint presentation with HPE highlighting case studies for partnership-based technological collaboration. Technical Leader Alex Kim of SK hynix’s NAND Technology Planning (TP) department, and Technical Leader Annie Yuan from SK hynix America’s NAND TP department, joined Erik Grigson of the Server Options team at HPE for the talk titled “Empowering AI and Enterprise Storage: SK hynix’s Readiness for AI Workload.” During the session, the speakers shared strategies for addressing AI workloads in enterprise storage environments and for pursuing eSSD technological differentiation.
Presentation by SK hynix’s Byungyule Kim (first photo) and SK hynix America’s Santosh Kumar (second photo) on CXL memory
At a theater session, Technical Leader Byungyule Kim of SK hynix’s DRAM Solution department and Santosh Kumar of DRAM TP at SK hynix America presented their insights on “CXL Memory Usage Model and Next CMM Proposal.” During the talk, the pair explained the company’s forward-looking vision for CMM-DDR5 as well as real-world use cases for implementing the CXL memory model.
With the adoption of AI infrastructure accelerating, high-performance memory and storage have become key solutions. Building on the momentum of HPE Discover Las Vegas 2025, SK hynix will continue to proactively meet market needs by collaborating with global partners such as HPE and accelerating innovation in memory-centric AI infrastructure.
