Press Release

hynix Receives Intel Validation For Low Latency High Performance 512Mb DDR2

By December 15, 2003 December 9th, 2019 No Comments

San Jose, California, December 15, 2003

hynix Semiconductor Inc., today announced its low latency high performance 512Mb DDR2 components have successfully passed Intel validation with mass production scheduled for first quarter of 2004.

hynix is also currently sampling its 1Gb DDR2 components and it is expects to pass Intel validation by end of this year. hynix has received validation on its low latency 512Mb DDR2-533 (CL-tRCD-tRP/4-4-4) and DDR2-400 (CL-tRCD-tRP/3-3-3) in x8 configuration. The hynix 512Mb DDR2 SDRAM fully complies with JEDEC DDR2 specifications and standards and are manufactured on the company’s advanced Golden Chip .11-micron process technology. The devices can operate at a data transfer rate of up to 800 Mbps (Megabits Per Second) at 1.8V and are available in x 4/x8/x16 configurations in a FBGA package.

hynix anticipates strong demand for DDR2 memory products in 2004 as the server and PC industry adopt various Intel chipsets supporting DDR2. According to Farhad Tabrizi, Vice President of Worldwide Marketing, “This Intel validation further reflects hynix’s strength and leadership position in next generation memory architecture.”

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