hynix Semiconductor Developed the World’s First 2Gb Mobile DRAM

Seoul, Korea – December 3rd, 2008

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced it has developed the world’s first 2Gigabit mobile DRAM using 54nm process technology.

This product provides twice as much storage capacity over current 1Gb mobile solution which has been the highest density offered among the mobile DRAM products in MCP(Multi Chip Package), PoP(Package on Package) platform. It boasts maximum operating speed of 400Mbps(Megabits per second) at 1.2V power supply and processes up to 1.6 Gigabytes of data per second with a 32-bit I/O. Moreover, the new product consumes less power than existing memory solutions.

Besides its various features, the new product also has function of hynix’s ‘One Chip Solutions’. It offers flexible options to meet the specific needs of the customers for both SDRAM and DDR DRAM interfaces, and both x16 and x32 organizations on a single chip.

With its great performances, the product which meets JEDEC standard is well suited for the next generation applications of MID(Mobile Internet Device) and UMPC(Ultra Mobile PC) as well as higher density required products.

This 2Gigabit mass storage solution meets all major technical requirements of mobile products which are high memory density, low power consumption, fast operating speed and small size features. hynix plans to start mass production in the first half of next year in order to satisfy the increasing demand for high performance mobile applications.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com