Press Release hynix Announces 1066Mbps, 512MB/1GB/2GB DDR3 SO-DIMM Validation ICHEON, Korea — April 2nd, 2008 hynix Semiconductor Inc. (“hynix” or “the Company”) today announced… April 2, 2008 user Love0
Press Release hynix Introduces Industry’s Fastest 185MHz 512Mb Mobile DDR SDRAM with ECC Seoul, March 15, 2007 hynix Semiconductor, Inc. ('hynix' or 'the Company', www.hynix.com) today announced it… March 15, 2007 user Love0
Press Release hynix Develops the World’s Fastest 200MHz 512Mb Mobile DRAM Seoul, December 4, 2006 hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) today announced it… December 4, 2006 user Love0
Press Release hynix Receives Intel Validation For Low Latency High Performance 512Mb DDR2 San Jose, California, December 15, 2003 hynix Semiconductor Inc., today announced its low latency high… December 15, 2003 user Love0
Press Release hynix Submits 512Mb DDR2 SDRAM Samples to Intel For Evaluation Intel Developer Forum, San Jose, CA -September 16, 2003 In preparation for IDF Fall 2003,… September 17, 2003 user Love0
Press Release hynix Receives Validation from Intel for ITS 333Mbps High-speed 512Mb DDR SDRAM San Jose, California, January 20, 2002 hynix Semiconductor Inc. announced a successful Intel validation and… January 21, 2003 user Love0
