Figure 1. SK hynix’s booth at Intel Innovation 2023
SK hynix announced on September 22 that it showcased its latest memory technologies and products at Intel Innovation 2023 held September 19–20 in the western U.S. city of San Jose, California.
Hosted by Intel since 2019, Intel Innovation is an annual IT exhibition which brings together the technology company’s customers and partners to share the latest developments in the industry. At this year’s event held at the San Jose McEnery Convention Center, SK hynix showcased its advanced semiconductor memory products which are essential in the generative AI era under the slogan “Pioneer Tomorrow With the Best.”
Figure 2. SK hynix’s cutting-edge CXL, HBM3, and DDR5 RDIMM products were on display
Products that garnered the most interest were HBM31, which supports the high-speed performance of AI accelerators, and DDR5 RDIMM, a DRAM module for servers with 1bnm process technology. As one of SK hynix’s core technologies, HBM3 has established the company as a trailblazer in AI memory. SK hynix plans to further strengthen its position in the market by mass-producing HBM3E (Extended) from 2024.
1High Bandwidth Memory (HBM): A high-value, high-performance product that revolutionizes data processing speeds over conventional DRAMs by vertically connecting multiple DRAMs with through-silicon via (TSV) technology.
Meanwhile, DDR5 RDIMM with 1bnm, or the 5th generation of the 10nm process technology, also offers outstanding performance. In addition to supporting unprecedented transfer speeds of more than 6,400 megabits per second (Mbps), this low-power product helps customers simultaneously reduce costs and improve ESG performance.
Visitors to the SK hynix booth could also see its DDR5-based 96 gigabyte (GB) CXL2 memory module products. The exhibit introduced the application cases of CXL such as with AI acceleration systems, and highlighted the benefits of the technology in terms of performance, reliability, security, and maintenance. Other products on display included LPDDR5X (Low Power Double Data Rate 5 eXtended) for mobile devices and DDR5 modules for servers and PCs.
2Compute Express Link (CXL): A next-generation interconnect protocol based on PCIe for efficiently building high-performance computing systems. It enables utilization of next-generation memory solutions that can be used in conjunction with existing DRAM products to increase the memory bandwidth of server systems and improve performance while easily expanding memory capacity.
Figure 3. Jinpyung Kim of DRAM Product Planning at SK hynix (left, first image) and Brian Yoon of DRAM Technology Planning at SK hynix America (right, first image) held a session on DDR5 and CXL technologies
Additionally, company employees held a session on how DDR5 and CXL memory can realize data-driven innovation. During the session, Jinpyung Kim of the DRAM Product Planning department at SK hynix and Brian Yoon from the DRAM Technology Planning department at SK hynix America discussed how DDR5 and CXL technologies are set to play a key role in the era of AI and big data.
“We will continue to showcase our advanced technologies to strengthen partnerships with our customers and further solidify our position as a global technology company that leads the way in various markets,” said Sungsoo Ryu, head of DRAM Product Planning at SK hynix.
