hynix Announces the Intel Validation of 40nm Class 2Gb DDR3 Products

Seoul, Korea – November 20th, 2009

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) has announced the Intel validation of 2Gb (Gigabit) DDR3 DRAM using 40nm class process technology.

hynix’s newly validated products are 2Gb DDR3 SDRAM component, 4GB (Gigabyte) DDR3 SODIMM (Small Outline Dual In-line Memory Module) and 2GB DDR3 UDIMM (Un-buffered Dual In-line Memory Module) at the operating speed of 1333MHz with 1.5V power supply.

The products can offer the maximum data transfer speed of 1867MHz with 16-bit I/O and 3.7GB/s (Gigabytes per second) bandwidth. The productivity of hynix’s 40nm class 2Gb DDR3 is increased by more than 60% over 50nm class process technology.

In addition, hynix responds to the industry demand for ‘Green’ or ‘Eco-friendly’ products with this new 40nm class 2Gb DDR3 that reduces power consumption by 40% over the preceding products using 50nm class. This is about twice as much as the industry average of reduction in terms of power consumption.

“The current mainstream density has been rapidly transferring from 1Gb to 2Gb for the higher performance servers market. We expect to secure the industry’s best features of both 1Gb and 2Gb DDR3 products”, said Mr. J.B. Kim, Chief Marketing Officer of hynix.

hynix has begun mass producing this new 2Gb DDR3 using 40nm class. The Company also expects that the validation of RDIMM (Registered Dual In-line Memory Module) will be also completed within this year.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.