Press Release

hynix Introduces 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform

By August 10, 2009 December 9th, 2019 No Comments

Seoul, Korea – August 10th, 2009

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, announced the 4Gb (Gigabits) mobile DDR SDRAM is now supported on Intel’s ‘Moorestown’ platform for MID (Mobile Internet Device) applications.

This high density memory device packs twice the storage capacity over current 2Gb mobile memory solutions and is offered in small form factor packages such as MCP (Multi Chip Package) and PoP(Package on Package). It boasts maximum operating speed of 400Mbps (Megabits per second), processing up to 1.6GB (Gigabytes) of data per second with a 32-bit I/O.

The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID, NetBooks and High-end smart-phones requiring high density, high speed memory and featuring low power consumption. High bandwidth memory functions such as high speed downloads, graphics and video processing will be well supported by this product.

The company plans to start mass production of this product in the third quarter of 2009, to satisfy the increasing demand for high density and high performance memory in mobile applications.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at



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