TAIPEI, Dec. 19, 2003
hynix Semiconductor Inc. (www.hynix.com) and ProMOS Technologies Inc. today announced the signing of a memorandum of understanding (MOU) to initiate a long term strategic alliance in technology licensing, foundry service and development of new generation memory production processes.
The new alliance will represent nearly one quarter of the world DRAM output. According to the MOU, hynix licenses to ProMOS certain proprietary technology for DRAM stack process, while ProMOS offers to hynix its 300mm fab capacity. hynix and ProMOS also plan to collaborate in the development of next-generation process technologies.
The world’s third largest DRAM maker, hynix excels in the development, sales, marketing and distribution of high quality semiconductor products, including DRAM, SRAM, Flash Memory, and system IC devices, making it an industry leader, and valuable alliance partner. ProMOS, renowned for its manufacturing quality and high wafer output yield rate, plans on building a second 300mm fab in Taiwan, to be integrated into its existing 300mm and 200mm fabs. In addition to technology licensing and capacity sharing, hynix and ProMOS have left open the possibility of more mutually beneficial projects in the future.
“We are happy to join forces with ProMOS in sharing its premium technology capability and manufacturing competence,” said C.S. Oh, Senior Vice President and Memory COO of hynix Semiconductor, “This partnership will further enhance our DRAM manufacturing capacity, allowing us to quickly deliver high-quality products to the market.” “hynix has been one of the world’s first-rate providers of DRAM. Its success comes from outstanding production efficiency, sustainable R & D investment, and a highly dedicated management team with a clear focus on semiconductors,” said Min-liang Chen, President of ProMOS. “The alliance forged between hynix and ProMOS advances both parties into a new phase of viable long-term growth. We envision enormous benefits to both our clients and ourselves.”
