Intel Developer Forum, San Jose, CA -September 16, 2003
In preparation for IDF Fall 2003, hynix Semiconductor, Inc. (www.hynix.com) announced it has submitted 512Mb DDR2 SDRAM devices to Intel Corporation for evaluation and its samples are successfully booting with Intel’s next generation dual processor server chipset code named ‘Lindenhurst.’
The hynix 512Mb DDR2 SDRAM is currently available in sample quantities with mass production scheduled for early 2004. “hynix’s DDR2 technology is geared for Intel’s next generation server, workstation, desktop, and mobile platforms starting in 2004,” said Pete MacWilliams, Senior Fellow Intel Corporation. “DDR2 memory technology is especially beneficial in rack mount server systems as it provides better performance while reducing power consumption.”
The hynix 512Mb DDR2 SDRAM devices will serve as the basis for its DDR2 DIMMs and will enable OEMs and system developers to deliver stable and high-performance DDR2 platforms for server, workstation and personal computing. The hynix 512Mb DDR2 SDRAM evaluation for validation by Intel follows its 512Mb DDR400 validation in June of 2003 and further demonstrates the hynix leadership position in the high-speed DDR memory market.
According to Farhad Tabrizi, Vice President of Worldwide Marketing, hynix projects a surge in demand for DDR2 memory products throughout 2004 as the server and PC industry adopt various Intel chipsets supporting DDR2 memory architecture. The hynix 512Mb DDR2 SDRAM devices are designed and manufactured on the company’s advanced .11-micron Golden Chip process technology. The devices being developed can operate at a data transfer rate of up to 667 (Mbps) per pin at 1.8 V and are offered in 128M x 4 bits, 64M x 8 bits, and 32M x 16 bits configurations in a FBGA package and fully comply with JEDEC DDR2 specifications and standards.
