World’s First Low Power – High Speed Mobile 1Gb DDR2 DRAM from hynix

Seoul, Korea – April 27th, 2009

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced that it has developed the world’s first mobile 1Gb DDR2 DRAM using 54nm process technology.

By successfully developing a 50nm-class process, hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.

This device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, boasts bandwidth of 4.26GB/s(Giga byte per second) on a single channel device and 8.52GB/s on a dual channel. hynix’s ‘One Chip Solution’ design, offers the customer flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip. Additionally, hynix’s new mobile DDR2 is an eco-friendly device since it consumes only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.

The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life.

The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.

hynix plans to start mass production of this product in the second half of this year to satisfy the increasing demand for high performance mobile applications.

Image Download

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.