Seoul, Korea, August 11, 2003
hynix Semiconductor Inc. (hynix, www.hynix.com), announced today that it has successfully completed development of its 1Gb DDR2.
hynix will begin sampling its 1Gb DDR2 in early 4Q 2003 and will begin its full-scale volume production by early 2004 to coincide with the release of Intel’s DDR2 chipset. hynix will utilize its Golden Chip 0.11-micron process technology for production of its 1Gb DDR2 and 512Mb DDR2. By effectively utilizing existing equipment, Golden Chip technology allows mass production of 0.11-micron technology products with minimum additional investment in capital expenditures.
The company estimates the use of its 0.11-micron technology will reduce overall investment requirements by 50% compared to its competitors and will increase the number of die per wafer by 40% in comparison to its .13-micron Prime Chip technology, maintaining hynix’s competitive position in cost and technology. hynix’s 1Gb and 512Mb DDR2 will be offered in 68-Ball, and 60/84-Ball Fine-Pitch Ball Grid Array (FBGA) package and fully complies with JEDEC specification and standards.
