Press Release

hynix Expands Low- and Super-Low Voltage Flash Memory Portfolio with New 32 Megabit Offerings New Flash Devices

By June 7, 2001 October 31st, 2019 No Comments
– hynix Semiconductor Expands Low- and Super-Low Voltage Flash Memory Portfolio with New 32 Megabit Offerings New Flash Devices Feature Advanced Capabilities and Target Cellular Phone, Networking and Consumer Electronic Markets

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SAN JOSE, Calif., June 4 /PRNewswire/

hynix Semiconductor Inc.’s (formerly Hyundai Electronics Industries) Flash Memory Business Unit today announced the introduction of two new 32 megabit (Mb), low-voltage Flash devices-the HY29DS322/323 and HY29LV320.

Targeted for today’s most advanced applications, the new devices bolster the company’s growing low-voltage Flash product portfolio, building on hynix’s current lineup of 2 to 8 Mb 5-volt (V) and 16 Mb 3V and 2V Flash memories. In particular, the new HY29DS322/323 device places hynix in a strong competitive position to provide Flash technology that supports the latest cellular phone features such as web browsing and voice recognition. Additionally, hynix’s HY29LV320 device, with a 70 nanosecond (ns) access time, is the fastest 32 Mb Flash memory device available.

Commenting on the new products and hynix’s commitment to becoming a leading supplier of high-performance Flash memories for a broad range of applications, Sam Young, vice president of marketing for hynix’s Flash Memory Business Unit, said, “As the natural extension of our successful 16 Mb low- and super-low voltage Flash products, these devices are targeted at applications requiring cost-effective 32 Mb 3V and 2V solutions. They are particularly well suited for the leading-edge requirements of manufacturers of networking products, consumer electronic equipment and cellular handsets. hynix is well positioned to support these large users of Flash from both product technology and volume manufacturing perspectives.” Added Young, “Like our other Flash products, these new devices capitalize on hynix’s proven DRAM technology and will be fabricated in our highly efficient and well-proven DRAM fabrication facilities. Our vast manufacturing capacity gives us a significant advantage over our competitors by allowing us to cost-effectively accommodate high-volume customer orders.”

Key Features: Fabricated using 0.25-micron CMOS lithography, each device provides 32 megabits of non-volatile storage and employs a hynix-developed, triple-well channel erase Flash technology. Both products also feature an accelerated programming mode that reduces programming time by up to 40%, and a secured sector that can be used to provide effective anti-cloning protection. Designed primarily for cellular phone applications, the super-low voltage HY29DS322/323 device reads, programs and erases over an operating voltage range of 1.8 to 2.2V and features a dual-bank, simultaneous read/write architecture. It is available in 100, 110 and 120 ns access time versions and can be configured for 4 Mb x 8 or 2 Mb x 16 operation. The HY29LV320 is configured as 2 Mb x 16, but is pin compatible with similar 32 Mb (x8/x16) products. The device is compatible with and serves as a density upgrade for the 16 Mb HY29LV160 and equivalents. The HY29LV320 operates from 2.7 to 3.6V and is available in 70, 80, 90, and 120 ns access time versions.

About Dual-Bank, Simultaneous Read/Write Operations: Dividing the Flash chip into two banks of memory sectors that can perform independent operations, dual-bank design permits simultaneous read and write operations. This allows the host system to program or erase in one bank while simultaneously reading from any sector in the other bank-with zero latency between read and write operations. For example, by storing operating code in one bank and data in the other, there is no need to interrupt the reading of the operating code to perform data programming or erase operations. This reduces the complexity of the operating code and eliminating the additional memory often required in older designs.

About Accelerated Programming: Allowing the end-user to program more units per hour, the accelerated programming feature reduces programming time, paring down the time to program the device by about 40 percent. This results in significant production cost savings for manufacturers. About Secured Sector: The Secured Sector (Sec2) is an additional Flash sector capable of being permanently locked at the factory or by customers. A corresponding secured indicator bit is permanently set to a “1” if the part is factory locked and permanently set to a “0” if it is customer locked. In this way, customer lockable parts can never be used to replace a factory locked part. This offers broad protection by enabling applications such as cellular phones and set-top boxes to store a unique serial number as an effective anti-cloning measure.

hynix’s Triple-Well Channel Erase Technology: This technology allows a reduction of the memory cell size of about 10 to 20 percent compared to competing Flash devices at the same lithography. This is realized primarily by a reduction in the channel length of about 20 percent. Additionally, the technology requires fewer processing steps and makes it easier to achieve the cell’s endurance and data retention specifications. A number of device-design related benefits also result.

Packaging: The HY29DS322/323 and HY29LV320 are available in 48-pin TSOP and 48-ball, 7.25 x 12.0 mm, Fine Ball Grid Array (FBGA) packages. Both devices are fully compliant with JEDEC standards, and are pin-out and software compatible with the single power supply Flash device requirements. In addition, the devices are compliant with the Common Flash Memory Interface (CFI) specification, in which Flash device parameters are stored directly on the device. This allows the software driver to identify and use a variety of different current and future Flash products.

Price and Availability: The HY29DS322/323 is currently being sampled, with full production starting in July of this year. Pricing for commercial temperature, TSOP packaged versions of these devices in 10 Ku quantities will be $11.90 for the 110 ns access time version. Samples of the HY29LV320 are also available now, with volume production scheduled for the third quarter. Pricing for the 90 ns, commercial temperature, TSOP packaged version of this device in 10 Ku quantities will be $10.75. Both devices are also available in industrial (-40 to +85 degrees C) grade versions.


About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. hynix Semiconductor is the world’s largest DRAM supplier with eleven semiconductor-manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, hynix is expanding its system IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Based in Korea, hynix maintains development, manufacturing, sales and marketing facilities strategically located worldwide. hynix Semiconductor America Inc. (HSA) is a U.S. subsidiary of hynix Semiconductor Inc. HSA and HSI’s Flash Memory Business Unit are headquartered at 3101 North First Street, San Jose, Calif., 95134. More information on hynix Semiconductor America Inc. and its products is available from the company’s web site at