Press Release

hynix Receives Validation from Intel for ITS 333Mbps High-speed 512Mb DDR SDRAM

By January 21, 2003 December 9th, 2019 No Comments

San Jose, California, January 20, 2002

hynix Semiconductor Inc. announced a successful Intel validation and launched mass production of a high-speed 333Mbps 512Mb DDR SDRAM.

The Intel Corporation validation of the hynix high-speed 333Mbps 512Mb DDR SDRAM is a first for the Korean DRAM industry. “This validation from Intel demonstrates a confidence in the performance of our 512 Mb DDR SDRAM,” said Farhad Tabrizi, Vice President of Worldwide Marketing at hynix. “At hynix, we continue to leverage our advance technology and production capabilities to deliver timely products that give our customers an edge in a highly competitive marketplace. We expect this validation to have a very positive impact on future DDR SDRAM sales.”

hynix has applied its 0.13-micron Prime Chip manufacturing technology to the development of the 512 DDR SDRAM. The chipset has an external power source of 2.5V, TSOP/FBGA packaging and can operate at the highest speed of DDR 333. hynix offers a broad range of DDR SDRAM products to meet the diverse needs of desktop, portable, networking and graphics applications. The high-speed 512Mb DDR SDRAM meets the demand for high-bandwidth and low latency while increasing the memory density needed for future high-end desktop, server and mainframe applications. Initially, the 333Mbps 512Mb DDR SDRAM will be used in 2 Gigabyte (GB) registered DIMM modules, providing higher memory density needed for server applications, and 1GB Small Outline DIMM’s for high-performance notebook application. hynix expects the mass production of 512Mb DDR SDRAM will enhance its market leadership and add world class standing to its product offerings.