Press Release

hynix Unveils High Capacity Memory for Mobile Phones

By November 29, 2001 December 7th, 2020 No Comments

Seoul, Korea, November 29, 2001

hynix Semiconductor Inc., ( today announced that it has produced samples of 16M-bit and 32M-bit Pseudo SRAM targeted for the mobile handset market.

Manufactured using 0.18-micron process technology, the part employs DRAM cells for highly concentrated memory function and capacity. In addition, for the first time in the industry, the part is 100 percent interchangeable with standard SRAM and low-power SRAM for mobile applications. The chips are offered with operational voltages of 2.5V, 3.0V, 2.3V~3.6V, power consumption of 100uA in waiting mode and speeds of 70ns and 85ns to meet the specific requirements of mobile phone applications. It also features a 7mm x 8mm 48-ball FBGA (Fine Pitched Ball-Grid-Array) package, suitable for space constrained board designs. The chip adopts a ‘deep power down mode’, which reduces power consumption under 1uA current.

hynix has already provided die and packaged samples to major customers. Volume production will begin in the first quarter 2002 with an estimated market price of $5 dollars per 16Mb equivalent. hynix strategically developed the chip for the wireless handset market– including high-end cellular phones and wireless handsets, such as PDA (Personal Data Assistant) and DVC/DSC (Digital Video Camera and Digital Still Camera)–and it is believed that the pseudo chip will replace the current SRAM as the IMT-2000 market grows in the future. It is projected that the worldwide mobile handset market will reach 390 million units this year and grow more than 15%, reaching 460 million units next year.

In particular, the demand for the chip is expected to surge in Asian markets, including Korea and Japan, as third generation service evolves. In China, full-scale service for 2.5 and third generation technology will continue to grow for the next two or three years. In addition to the growing pseudo chip market, hynix has also concentrated on research and development to ensure cost competitiveness for its 1M ~ 8M SRAM product family. hynix has continuously reinforced its SRAM business since 1999 and is committed to producing superior technology at cost-competitive prices, bolstering its presence in the SRAM market.

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. hynix Semiconductor is the world’s leading DRAM supplier with thirteen semiconductor-manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, hynix is expanding its system IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Based in Korea, hynix maintains development, manufacturing, sales and marketing facilities strategically located worldwide.