– Secured a core technology for the production of the next generation high-integration memory
– Made it possible to reduce the existing process steps by more than 30% and save production costs by more than 40%
Hyundai Electronics (CEO: Young-Whan Kim) has succeeded in developing the new capacitor process technology using Tantalum Nitric Acid (TaON) film, the core technology for the production of the next generation memory semiconductor element for the first time in the world.
The capacitor production process technology using Tantalum Nitric Acid (TaON) film is the core process technology for the next generation memory element which is expected to influence the success of mass production in applying the super slim width technology of less than 0.18 micron (1 micron=1/1 million meter) at the time of producing the next generation memory products higher than 256 Mega D RAM in the future.
The Tantalum Nitric Acid (TaON) film capacitor process technology is the technology which forms capacitor by attaching Tantalum Nitric Acid (TaON) film, the high electricity-inducing element, into the cell inside the memory chip, and the core technology which can satisfy the situation where the high capacity electric charge is needed to preserve as the memory chip becomes highly integrated drastically. The Tantalum Nitric Acid (TaON) film has a much better electrical aspect than Tantalum Oxide (Ta2O5) film, currently known as the next generation capacitor electricity-inducing film. And since it also has a simple production process so that it can reduce the process steps by more than 30%, it seems to provide a dramatic turning point in terms of improving profitability by saving production costs more than 40%.
The capacitor production technology using Tantalum Nitric Acid (TaON) made it possible to mass produce the next generation semiconductor products earlier with the Hyundai Electronics’ unique technology that no other rival firm in and outside the country has, and to prepare for the stepping stone for the aggressive prior market occupation. The Tantalum Nitric Acid (TaON) film that rival firms in and outside the country are developing has troubles such as the ‘Oxygen Vacancy’ due to unstable ‘Stoichiometry’ and the leaking electricity due to carbon impurities inside the electricity-inducing film that appears at the time of forming a thin film.
Therefore, the Tantalum Nitric Acid (TaON) film capacitor production technology necessitates a preceding and following heat treatment process in order to stop the electricity leakage such as low-temperature oxidization and high-temperature nitrification process. As shown, the capacitor production process using Tantalum Nitric Acid (TaON) film has many steps of unit process, and needs a large scale new equipment investment. But it has had many problems to secure a large capacity of constant electricity.
However, the Tantalum Nitric Acid (TaON) production technology by Hyundai Electronics is the core technology that exceeds the ones of domestic and foreign raval firms, and is expected to prepare for the dramatic turning point in improving productivity of the products, ranging from 256 Mega D RAM produced by the microscopic circuit process of less than 0.15 Micron to the next generation 512 Mega D RAM or 1 Giga D RAM produced by the super microscopic circuit process of less than 0.13 Micron. Especially, the technology is expected to save the production costs by reducing the process by more than 30% compared to the existing one, and also save the expenses for investment in production facility more than $50 million at least. Since it has succeeded in the domestic production of LP-CVD that is applied to the core process with Joo Sung Engineering, the domestic semiconductor equipment-specialized company, it expects to gain huge profits by creating the added value out of the co-development.
