Press Release

Hyundai Electronics Develops New Ferrolectric RAM (FeRAM)

By April 27, 2000 December 7th, 2020 No Comments

●Hyundai Electronics Industries Co., Ltd. today announced that it has developed 64K and 256K ferroelectric RAM (FeRAM).

The company expects to soon stabilize features and achieve product reliability, thereby enabling the commercialization of FeRAM earlier than originally planned. Hyundai plans to deliver samples to its business partners in third quarter of this year. “Fe RAM is emerging as the next-generation memory semiconductor,” said Chong Sup Park, president and chief executive officer of Hyundai Electronics Industries. “FeRAM is a non-volatile memory that combines the capacity of DRAM, the speed of SRAM, and the data retention capabilities of flash memory. Compared with flash memory and EEP ROM (Electrically Erasable & Programmable Read Only Memory), FeRAM uses less voltage during operation and writes data 1,000 times faster.” The 64K FeRAM operates at 2V power, and the 256K FeRAM can be used in the 3V-to-5V range by stabilizing the standard voltage. Targeted at the mobile phone, personal digital assistant (PDA), smartphone, and smartcard markets, Hyundai’s FeRAM devices are deemed suitable replacements for memory products currently used in portable electronic devices. “Hyundai’s FeRAM offers several key features,” said Park. “It is made of Strontium Bismuth Tantalite to enhance product reliability. By employing an innovative memory cell technology that requires no internal booster circuit, power consumption is significantly reduced. The new cell design is also effective in making the chip smaller. This technology will continue to be used in development of a hybrid FeRAM, a next-generation, high-integration FeRAM product which Hyundai is now developing in order to gain long-term leadership of the entire FeRAM market.” These high-performance FeRAM products are also cost-effective for Hyundai to produce because they are compatible with the company’s current DRAM production process. Internal market analyses show the growing market for FeRAM is expected to reach 1.2 billion units by the year 2002. The market is forecast to increase rapidly over the next several years and should be a significant memory player over the next few years. Applications expected to take advantage of FeRAM’s speed, density, and non-volatility include Desktop PCs, Mobile (laptop) Systems, Communications Devices, and Gaming Systems. Glossary EEP ROM: (Electrically Erasable & Programmable Read Only Memory) This memory device has features of both ROM and RAM. It retains data even if power is turned off, and information can be input or output when 5V power is supplied. About Hyundai ElectronicsTM Hyundai Electronics is an industry leader in the development, manufacture, sales, marketing, and distribution of high-quality Semiconductors (including DRAM, SRAM, Flash memory, and System IC devices), Telecommunications, and Liquid Crystal Displays. In addition, Hyundai? is expanding its System IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. The Semiconductor Group of Hyundai Electronics is the world’s largest DRAM supplier with eleven semiconductor manufacturing facilities world wide, and production capacity of over 300,000 wafer starts per month. Based in Korea, Hyundai maintains development, manufacturing, sales and marketing facilities strategically worldwide. Hyundai Electronics America (HEA) is a U.S. subsidiary of Hyundai Electronics Industries Co., Ltd. HEA is headquartered at 3101 North First Street, San Jose, CA 95134. More information on Hyundai Electronics America and its products is available from the company’s web site at