Press Release

HYUNDAI MICROELECTRONICS ANNOUNCES 256MB SDRAM USING CUTTING EDGE 0.15 MICRON TECHNOLOGY

By November 9, 1999 December 7th, 2020 No Comments
– Hyundai’s New 0.15 Micron SDRAM Offers High Density and Blazing 166MHz Speeds

Hyundai MicroElectronics today announced sampling of high-speed 256Mb SDRAM devices. These devices are targeted to the server and workstation markets to meet increasing demands for higher density memories. These components can be used to build 512MB memory modules with standard module technology or 1GB modules using stacked module technology. These new devices run at 166MHz and offer the fastest operating frequency of any 256Mb SDRAM to date. To achieve this fast speed, Hyundai uses a new cutting-edge 0.15 micron manufacturing process. In addition to the high density and very fast 166MHz operation, this part also offers PC133 performance with a CAS Latency of two (2). “As far as performance goes, this part is at the top of the class for SDRAM,” noted David Dorrough, product marketing manager at Hyundai Electronics America. Parts with a CAS latency of 2 enable the memory to respond more quickly to requests from the processor. This improves the latency from approximately 50ns to 42.5ns. As a result, system performance is improved. Hyundai expects excellent reliability from this new part. Farhad Tabrizi, vice president of strategic marketing and product planning for Hyundai MicroElectronics’ DRAM Business Unit, pointed out, “This is actually our second-generation 256Mb device. The first generation part was built on a 0.18 micron process and was used to prove the design. Because we have already gained experience from our 0.18 micron design, we expect very high reliability from this new 0.15 micron, 256Mb device.” In addition to reliability, the new 0.15 micron design allows for more cost effective production — making this an attractive high density memory product for the workstation and server OEM. This new design will help drive down the price of 256Mb devices, so that eventually, the 256Mb part will meet price parity with current 64Mb and 128Mb SDRAM parts and be incorporated into mainstream PC platforms. •PC133 Market Trend The 133MHz SDRAM part with a CAS latency of 2 comes just in time for the next DRAM technology transition. Although the most common form of DRAM shipped today is PC100, PC133 is quickly growing in popularity in the DRAM market. PC133 chipsets are already in production and many more PC133 chipsets are set to launch early next year. As a result, PC133 will become the fastest growing memory technology in early 2000. The PC133 specification is also an excellent match for the Coppermine, Intel’s newest processor that was just announced last week. The Coppermine has a 133MHz front side bus, which exactly matches the bandwidth of PC133 devices. Hyundai’s new 256Mb part is PC133 compliant, and therefore, synchronizes exactly with this new Intel processor. As a result of this match, very high performance can be expected from systems built with this memory. •Key Features This new part operates using an industry-standard 3.3V power supply and the standard LVTTL interface. In addition to the common LVTTL interface, there is also an option for SSTL signaling. The part uses the standard 8K refresh and has 4 internal banks, thus making it compatible with current generations of SDRAM. The parts are available in industry-standard 400mil TSOP packages. This is the same package that is used for 64Mb and the 128Mb SDRAMs. Because the package is the same, the upgrade to 256Mb technology can be made without expensive modifications to printed circuit board (PCB) layouts. •Price and Availability The 256Mb SDRAM (HY57V56820AT) is available now in sample quantities. Price is about $130. Full production of this new SDRAM device is set for the second quarter of 2000. In addition, Hyundai MicroElectronics expects to make available both 512MB and 1GB modules in the second quarter of 2000 as well. •About Hyundai MicroElectronics Hyundai MicroElectronics is the semiconductor group of Hyundai Electronics Industries Co., Ltd. (HEI) of Ichon, Korea. Hyundai MicroElectronics is an industry leader in the development, sales, marketing and distribution of high-quality microelectronics (including DRAM, SRAM, Flash memory, and System IC devices) and also provides foundry services for outside customers. According to International Data Corporation (IDC) of Framingham, MA, the Hyundai MicroElectronics Group is the world’s largest DRAM supplier. Based in Korea, Hyundai MicroElectronics maintains development, manufacturing, sales and marketing facilities strategically worldwide. Hyundai Electronics America (HEA) is a U.S. subsidiary of Hyundai Electronics Industries Co., Ltd. HEA is headquartered at 3101 North First Street, San Jose, CA 95134. More information on Hyundai Electronics America and its products is available from the company’s web site at http://www.hea.com.