Press Release

Hyundai MicroElectronics Enters Low and Super Low Voltage Flash Memory Market

By April 10, 2000 December 7th, 2020 No Comments
– Trio of new memory products targeted at high volume cellular phone, and consumer and industrial electronics applications.

Hyundai’s Flash Memory Business Unit today announced the unveiling of its new single power supply, low- and super-low voltage Flash memories targeted at cellular phone and other consumer and industrial electronics applications such as set-top boxes, PDAs, and networking/telecom equipment. Each of the new devices provides 16 megabits of non-volatile storage organized as 2M x 8 or 1M x 16. These devices are fabricated using 0.35¥ì CMOS lithography, and are the first to employ a new, Hyundai-developed, triple-well channel erase technology. The super-low voltage HY29DS162/163 offering is available in 100 and 120 nanosecond (ns) access time versions. These devices read, program, and erase over a range of 1.8 to 2.2 volts and feature a dual bank, simultaneous read/write architecture. The HY29DL162/163 offering is also a dual bank, simultaneous read/write Flash memory, but operates from 2.7 to 3.6 volts. It is available at access times of 70, 90 and 120 ns. The HY29LV160 is a conventional, high performance, single-bank Flash memory that operates from 2.7 to 3.6 volts and is available in 70, 80, 90, and 120 ns access time versions. Steven Grossman, senior vice president and general manager for Hyundai’s Flash Memory Business Unit, said, “These products represent Hyundai’s entry into the low- and super-low voltage Flash arena for power-conscious applications such as cellular phones. Hyundai is particularly well positioned to support these large users of Flash from both product technology and volume manufacturing perspectives.” Grossman continues, “Like our 5-volt products, these new devices capitalize on Hyundai’s proven DRAM technology and are being fabricated in Hyundai’s highly efficient and well-proven DRAM fabrication facilities to assure customers of cost-effective high-volume product availability.” Key Features Key features of the HY29DS162/163 and HY29DL162/163 devices include dual bank, simultaneous read/write operations, a Secured Sector, and accelerated programming. The dual bank design divides the Flash chip into two banks of memory sectors that can perform independent operations. This permits simultaneous read/write operations, which allows the host system to program or erase in one bank, while simultaneously reading from any sector in the other bank with zero latency between read and write operations. By storing operating code in one bank and data in the other, there is no need to interrupt the reading of the operating code to perform data programming or erase operations. This reduces the complexity of the operating code and eliminates an additional memory often required in older designs. The Secured Sector is an additional 64 KByte sector capable of being permanently locked at the factory or by customers. A corresponding secured indicator bit is permanently set to a ‘1’ if the part is factory locked and permanently set to a ‘0’ if customer locked. This way, customer lockable parts can never be used to replace a factory locked part. Products such as cellular phones and set-top boxes can store a unique serial number in this sector as an effective anti-cloning measure. A third feature is accelerated programming, which reduces programming time from 11 microseconds (¥ìs) per word to 7 ¥ìs per word, thus paring down the time to program the device by about 40 percent. This results in significant production cost savings. The HY29LV160 and HY29DL162/163 are second sources to similar devices currently on the market from manufacturers such as AMD and Fujitsu. Like the HY29DS162/163, they are fully compliant with JEDEC standards, pinout and software compatible with the single power supply Flash device requirements, and have superior inadvertent write protection. The three devices are also compliant with the Common Flash Memory Interface (CFI) specification, in which Flash device parameters are stored directly on the device. This allows the software driver to identify and use a variety of different current and future Flash products. Packaging The HY29DS162/163, HY29DL162/163 and HY29LV160 components are all available in 48-pin TSOP and 48-ball FBGA packages. Price and Availability The HY29DS162/163 and HY29LV160 parts will be available in sample and initial production quantities starting in May of this year. Pricing for TSOP packaged versions of these devices in 10 Ku quantities will be $16.95 for the HY29DS162/163 (120 ns) and $14.95 for the HY29LV160 (90 ns). Sample and initial production quantities of the HY29DL162/163 parts will be available in July. Pricing for the 90 ns, TSOP packaged version of this device in 10 Ku quantities will be $16.95. Volume production quantities of all devices are scheduled for the third quarter. Hyundai’s New Triple-Well Channel Erase Technology This new technology allows a reduction of the memory cell size of about 10 to 20 percent compared to competing Flash devices at the same lithography. This is realized primarily by a reduction in the channel length of about 20 percent. Soon to be released Flash products at 0.25 micron process geometry will have a cell size of 0.69 square microns. Additionally, the technology requires fewer processing steps and makes it easier to achieve the cell’s endurance and data retention specifications. A number of device-design related benefits also result. About Hyundai MicroElectronics Hyundai MicroElectronics is the semiconductor group of Hyundai Electronics Industries Co., Ltd. (HEI) of Ichon, Korea. Hyundai MicroElectronics is an industry leader in the development, sales, marketing, and distribution of high-quality microelectronics (including DRAM, SRAM, Flash memory, and System IC devices). According to International Data Corporation (IDC) of Framingham, MA, the Hyundai MicroElectronics Group is the world’s largest DRAM supplier. In addition Hyundai is expanding its System IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Based in Korea, Hyundai MicroElectronics maintains development, manufacturing, sales, and marketing facilities strategically worldwide. Hyundai Electronics America (HEA) is a U.S. subsidiary of Hyundai Electronics Industries Co., Ltd. HEA is headquartered at 3101 North First Street, San Jose, CA 95134. More information on Hyundai Electronics America and its products is available from the company’s web site at