Press Release

SK hynix Develops World’s Fastest High Bandwidth Memory, HBM2E

By August 12, 2019 December 9th, 2019 No Comments
– Industry’s first 460GB per second (3.6Gbps per Pin) data processing speed performance
– Expected to be adopted by high-end machine learning, supercomputers and 5G network applications in the fourth industrial era

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Seoul, Aug 12, 2019

SK hynix Inc. (or ‘the Company,’ announced today that it has developed HBM2E DRAM product with the industry’s highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2.

SK hynix’s HBM2E supports over 460GB (Gigabyte) per second bandwidth based on the 3.6Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16GB data capacity.

SK hynix’s HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance. Unlike commodity DRAM products which take on module package forms and mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few ㎛ units apart, which allows even faster data transfer.

“SK hynix has established its technological leadership since its world’s first HBM release in 2013,” said Jun-Hyun Chun, Head of HBM Business Strategy. “SK hynix will begin mass production in 2020, when the HBM2E market is expected to open up, and continue to strengthen its leadership in the premium DRAM market.”



Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader (Assistant Manager)
Hyun Kyung Olivia Lee
Phone: +82.31.8093.4771

Technical Leader (Senior Manager)
Eun Suk Yixi Lee
Phone: +82.31.8093.4790