[Dr. John Langan CTO(Chief Technology Officer) of Versum Materials Inc., Prof. Philip Wong of Stanford Univ., Prof. Yoshio Nishi of Stanford Univ., Dr. Choi Yongsoo of SK hynix Inc., Dr. Dave Hemker CTO of Lam Research Co.]
Seoul, October 13, 2016
SK hynix Inc. announced it has entered into an agreement with Stanford University to collaboratively research and develop ‘Artificial Neural Network Devices’ exploiting a ferroelectric material. Lam Research Corporation and Versum Materials, Inc. have also joined to accelerate the development process. This collaboration is expected to mark a milestone in the development of a Neuromorphic chip
A Neuromorphic chip is a semiconductor imitating the thinking process of a human brain, based on the Artificial Neural Network Devices. In the Big Data era, since numerous unstructured data such as texts, images, voices and visuals are combined, there is a limit in data recognition with typical serial order data processing. A Neuromorphic Chip is determined as the most efficient in unstructured data processing in the industry. It also makes up for speed drops and increase in power consumption of software-based neuromorphic computing.
This collaboration is expected to be an important starting point for going beyond the current limitation of computing structure in data throughput and speed. Current computing systems fulfill a command in serial order in which it is entered into a logic semiconductor such as CPU (Central Processing Units) or AP (Application Processors) then sequentially delivered to a memory semiconductor such as DRAM and NAND Flash.
On the other hand, a Neuromorphic Chip, which is the focus of this R&D collaboration, creates an entirely new data processing system. A Neuromorphic Chip will be equipped with both logic operation as well as memory functions, and therefore available for multiple simultaneous logic and data processes in a manner similar to how a human brains responds to external stimulus.
The ferroelectric material, with its novel property of maintaining polarization even when voltage is not applied to the material, is one of the core elements of the Neuromorphic Chip. The polarization to anode (+) and cathode (-) occurs as the dielectric substance is electrically charged, which means it is ready for indicating ‘0’ or ‘1’ which is the basic structure of data storage. Furthermore, the polarization status of the material is partially adjusted in line with voltage alteration and therefore multiple data differentiations could be stored. SK hynix and Stanford University are planning to develop the Artificial Neural Network Devices utilizing the Neuromorphic Computing Chip, which exploits these novel ferroelectric material characteristics.
“This joint R&D will make the best use of all the participants from devices, manufacturing process, equipment, materials, architecture area to accelerate the development process of the Artificial Neural Network Devices,”, said Executive Vice President Sung Joo Hong, the Head of R&D, SK hynix. “Plenty of research results of the ferroelectric materials have been accumulated from an academic perspective so the degree of understanding of which is deep enough to have bright prospect for the joint R&D,”, said Professor Yoshio Nishi of Stanford University., “The R&D effort will become the touchstone for future artificial intelligence era,” he added.
About SK hynix Inc.
SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.
About Lam Research
Lam Research Corp. (NASDAQ: LRCX) is a trusted global supplier of innovative wafer fabrication equipment and services to the semiconductor industry. Lam’s broad portfolio of market-leading deposition, etch, and clean solutions helps customers achieve success on the wafer by enabling device features that are 1,000 times smaller than a grain of sand, resulting in smaller, faster, more powerful, and more power-efficient chips. Through collaboration, continuous innovation, and delivering on commitments, Lam is transforming atomic-scale engineering and enabling its customers to shape the future of technology. Based in Fremont, Calif., Lam Research is a Nasdaq-100 Index® and S&P 500® company whose common stock trades on the Nasdaq Global Select Market(SM) under the symbol LRCX. For more information, please visit http://www.lamresearch.com.
About Versum Materials
Versum Materials, Inc. (NYSE: VSM) (versummaterials.com) is a best-in-class electronic materials company providing high-purity chemicals and gases, delivery systems, services and materials expertise to meet the evolving needs of the global semiconductor, display and LED markets. Derived from the Latin word for “toward,” the name “Versum” (pronounced ver-SOOM) communicates the company’s deep commitment to helping customers move toward the future by collaborating, innovating and creating cutting-edge solutions.
A global leader in technology, quality, safety and reliability, Versum is one of the world’s largest suppliers of next generation CMP slurries, ultra-thin dielectric and metal film precursors, formulated cleans and etching products, and delivery equipment that has revolutionized the semiconductor industry. Versum Materials operated for more than three decades as a division of Air Products. An independent company since October 2016, Versum has annual sales of about US$1 billion, 1,900 employees and 10 major facilities in Asia and the North America. It is headquartered in Tempe, Ariz.
Note: This press release contains “forward-looking statements” within the meaning of the safe harbor provisions of the U.S. Private Securities Litigation Reform Act of 1995. Forward-looking statements can be identified by references to future periods, and include statements we make about the anticipated success of the collaboration efforts to create a computing structure with increased computer data throughput and speed, and the forecasted demand for neuromorphic semiconductors. These forward-looking statements are based on management’s reasonable expectations and assumptions as of the date of this release. Actual results and the outcomes of future events may differ materially from the those expressed or implied in the forward-looking statements because of a number of risks and uncertainties, including, without limitation, general economic and business conditions that could decrease the demand for our goods and services; our ability to continue technological innovation to meet the evolving needs of our customers; and other risk factors described in our filings with the Securities and Exchange Commission, including the amended Registration Statement on Form 10, and our Current Reports on Form 8-K filed since. Versum assumes no obligation to update any forward-looking statements or information in this release.
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