Seoul, Korea, May 29, 2003
hynix Semiconductor Inc. (“hynix”, www.hynix.com), today announced it has launched volume production of its “Handy SDRAM”, an ultra-low power mobile SDRAM used in next generation mobile telecommunication handsets, Personal Digital Assistants (PDAs), Digital Still Cameras and various other consumer products.
Handy SDRAM, with an operating voltage of 1.8V in a 54-Ball FBGA package will be manufactured using the company’s .13-micron process technology. “The Handy SDRAM addresses the mobile market’s need for large amounts of memory with an extended battery life. We expect the low power DRAM market to exceed $1.5 billion by 2006 and expect to penetrate and capture a significant portion of this market through aggressive promotion of Handy SDRAM”, said Farhad Tabrizi, Vice President of Worldwide Marketing at hynix.
hynix has applied various leading-edge low-power technologies such as Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR), Deep Power Down (DPD), and Driver Strength (DS) validated by JEDEC, the semiconductor engineering standardization body, to maximize the efficiency of the product performance. Furthermore, by applying its “Automatic TCSR” technology geared to control self-refresh and speed within the DRAM cell, hynix can further reduce power consumption while increasing speed.
