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SK hynix in EE Times: SK hynix Driving the HBM3 DRAM Revolution

By June 22, 2022 No Comments

Enhancing supercomputers and data centers’ application-level performance has led to higher demands on DRAM and memory. SK hynix’s development of the world’s first HBM3, which began to be mass-produced in June 2022, is one step towards meeting these demands.

Sungsoo Ryu and Sunghak Lee, Head of SK hynix DRAM Product Planning and Technical Leader of SK hynix IPM Planning respectively, explain how the technology was developed in a recent EE Times column.

HBM3 supports max 819GB per second bandwidth performance, giving it an approximately 78% higher bandwidth performance compared with HBM2E at 460GB per second.

SK hynix also plans to continue strengthening relationships with key industry players, including SoC (system-on-chip), ASIC (application-specific integrated circuit), OSAT (outsourced assembly and test), and PHY/IP partners.

The company said that it would also supply HBM3 to NVIDIA starting in the third quarter of this year.

You can read the article in its entirety on EE Times here: SK hynix DRAM Product Planning at the Forefront of the HBM3 DRAM Revolution