Heritage - SK hynix Newsroom

2026. 04

SK hynix Begins Mass Production of 192GB SOCAMM2

2026. 04

SK hynix Begins Supply of 321-layer QLC NAND cSSD

2026. 03

SK hynix Develops 1c LPDDR6, 6th-Generation 10nm-Class DRAM

2026. 01

SK hynix LPDDR5X Achieves ASIL-D, the Highest Automotive Memory Functional Safety Rating

2025. 12

SK hynix First to Complete Intel Data Center Certification for 32Gb Die-based 256GB Server DDR5 RDIMM

2025. 09

SK hynix Completes the World’s First HBM4 Development and Readies Mass Production

2025. 09

SK hynix Begins Supplying Mobile NAND Solution ZUFS 4.1

2025. 08

SK hynix Starts Supplying Mobile DRAM With Highly Efficient Heat Dissipation

2025. 08

SK hynix Begins Mass Production of 321-Layer QLC NAND

2025. 05

SK hynix Develops UFS 4.1 Solution Based on 321-High NAND

2025. 03

SK hynix Ships the World’s First 12-Layer HBM4 Samples to Customers

2024. 11

SK hynix Starts Mass Production of the World’s First 321-High NAND

2024. 09

SK hynix Begins Volume Production of the World’s First 12-Layer HBM3E

2024. 09

SK hynix Develops PEB110 E1.S for Data Centers

2024. 08

SK hynix Develops the Industry’s First 1c DDR5

2024. 06

SK hynix Develops PCB01 for Artificial Intelligence PCs

2024. 05

SK hynix Develops Next-Generation Mobile NAND Solution ZUFS 4.0

2024. 03

SK hynix Begins Volume Production of the Industry’s First HBM3E

2023. 11

SK hynix Commercializes the World’s Fastest Mobile DRAM LPDDR5T

2023. 10

SK hynix’s LPDDR5T, the World’s Fastest Mobile DRAM, Completes Compatibility Validation with Qualcomm

2023. 08

SK hynix Develops the World’s Best Performing HBM3E, Provides Samples to Customer for Performance Evaluation

2023. 08

SK hynix Starts Mass Production of the Industry’s First 24GB LPDDR5X DRAM

2023. 08

SK hynix Showcases Samples of the World’s First 321-Layer NAND

2023. 06

SK hynix Begins Mass Production of the Industry’s Highest 238-Layer 4D NAND

2023. 05

SK hynix Enters the Industry’s First Compatibility Validation Process for 1bnm DDR5 Server DRAM

2023. 04

SK hynix Develops the Industry’s First 12-Layer HBM3, Provides Samples to Customers

2023. 01

SK hynix Develops the World’s Fastest Mobile DRAM LPDDR5T

2022. 08

SK hynix Develops the World’s Highest 238-Layer 4D NAND

2022. 06

SK hynix Supplies the Industry’s First HBM3 DRAM to NVIDIA

2022. 02

SK hynix Develops PIM, Next-Generation AI Accelerator

2021. 10

SK hynix Develops the World’s First HBM3 DRAM

2021. 07

SK hynix Starts Mass Production of 1anm DRAM Using EUV Equipment

2021. 04

SK hynix Begins Mass Production of the Industry's Highest-Performance Enterprise SSD

2021. 03

SK hynix Begins Mass Production of the Industry’s Highest-Capacity LPDDR5 Mobile DRAM

2020. 12

SK hynix Unveils the Industry’s Most Multilayered 176-Layer 4D NAND Flash

2020. 10

SK hynix Launches the World’s First DDR5 DRAM

2020. 07

SK hynix Starts Mass-Production of High-Speed DRAM HBM2E

2019. 10

SK hynix Develops 1Znm 16Gb DDR4 DRAM

2019. 08

SK hynix Develops the World’s Fastest High Bandwidth Memory, HBM2E

2019. 06

SK hynix Starts Mass-Producing the World’s First 128-Layer 4D NAND

2019. 05

SK hynix Ships Samples of High-Performance 96-Layer 1Tb QLC 4D NAND

2019. 03

SK hynix Demonstrates the Industry’s First ZNS-based SSD Solution for Data Centers

2018. 11

SK hynix Inc. Launches the World’s First ‘CTF-based 4D NAND’ (96-Layer 512Gb TLC)

2018. 11

SK hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM

2018. 11

SK hynix Inc. Develops 1Ynm 16Gb DDR5 DRAM

2018. 02

SK hynix Begins Customer Qualification of Next-Generation PCIe eSSD Based on 4th-Generation (72-Layer) 3D NAND

2018. 02

SK hynix Inc. Ramps Up Enterprise SSDs with its 72-Layer 512Gb 3D NAND

2017. 04

SK hynix Inc. Introduces Industry’s Highest 72-Layer 3D NAND Flash

2017. 04

SK hynix Inc. Introduces Industry’s Fastest 8Gb Graphics DRAM (GDDR6)

2017. 01

SK hynix Inc. Launches the World’s First Highest Density 8GB LPDDR4X

2015. 02

SK hynix Leads 8Gb LPDDR4 Adoption in Devices

2014. 10

SK hynix Develops the World’s Highest Density 16GB NVDIMM

2014. 09

SK hynix Develops the World’s First Wide IO2 Mobile DRAM

2014. 04

SK hynix Develops the World’s First 128GB DDR4 Module

2013. 12

SK hynix Develops the World’s First TSV-Based HBM

2013. 12

SK hynix Develops the World’s First Next Generation Mobile Memory LPDDR4

2013. 11

SK hynix Starts Full-Scale Mass Production of 16nm NAND

2013. 10

SK hynix Develops Industry-Leading 6Gb LPDDR3

2013. 06

SK hynix Develops the World’s First High Density 8Gb LPDDR3

2012. 09

SK hynix Develops Low-Voltage 4Gb Graphics DDR3

2012. 06

SK hynix Launches Client-side SSD

2011. 04

hynix Develops High Performance DDR4 DRAM

2011. 03

hynix Semiconductor Develops the World’s Highest-Capacity DRAM Using TSV Technology

2010. 12

hynix Semiconductor Develops the World’s First 30nm-Class 4Gb DRAM

2010. 02

hynix Semiconductor Successfully Develops 20nm-Class 64Gb NAND Chip

2010. 01

hynix Semiconductor Develops the World’s First 2Gb Mobile Low Power DDR2 DRAM

2009. 12

hynix Develops the World’s First 40nm-Class 2Gb GDDR5 DRAM

2009. 10

hynix Develops the Second Generation 1Gb DDR3

2009. 08

Hynix Develops 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform

2009. 04

hynix Semiconductor Develops the World’s First Low Power – High Speed Mobile 1Gb DDR2 DRAM

2009. 03

hynix Secures Intel’s Validation of the World’s First 8GB 2-Rank DDR3 R-DIMM

2009. 02

hynix Semiconductor Develops the World’s First 44nm DDR3 DRAM

2009. 01

hynix Semiconductor Secures Intel Certification for the World’s Fastest 4GB ECC UDIMM Module for DDR3 Servers

2008. 12

hynix Semiconductor Develops the World’s First 2Gb Mobile DRAM

2008. 12

hynix Semiconductor Develops the World’s First 16GB 8-Stack NAND

2008. 12

hynix Semiconductor Develops the World’s First Ultra-Compact Server Module with Wafer-Level Packaging

2008. 11

hynix Develops the Industry’s Fastest 7Gbps, 1Gb GDDR5 Graphics DRAM

2008. 08

hynix Semiconductor Develops the World’s First 16GB Server Module

2008. 06

hynix Semiconductor Develops the World’s First 32Gb NAND Memory Based on Triple-Level Cell (X3) Technology

2008. 04

hynix Develops the World’s Fastest 1Gb Mobile LPDDR2

2008. 02

hynix Semiconductor Develops High-Performance 8GB DDR2 Server Memory Module Based on 2-Rank Architecture with MetaRAM

2008. 01

Hynix Secures 800MHz, 1GB/2GB UDIMM Validation

2007. 11

hynix Develops the Industry’s First 1Gb GDDR5 DRAM

2007. 11

hynix Semiconductor Inc. Receives Intel Validation for 1Gb DDR2 DRAM

2007. 09

hynix Semiconductor Develops the World’s First 24-Layer NAND MCP

2007. 08

hynix Semiconductor Develops the Industry’s Smallest and Fastest 1Gb Mobile DRAM

2007. 05

hynix Receives the Industry’s First DDR3 Validations

2007. 05

hynix Semiconductor Develops the Industry’s First Ultra-Thin 20-Layer NAND MCP

2007. 04

hynix Semiconductor Begins Full-Scale Mass Production of Fusion Memory DOC H3

2007. 03

hynix Develops the Industry’s Fastest 185MHz 512Mb Mobile DDR SDRAM with ECC

2007. 01

hynix Semiconductor Develops a High-Speed Memory Module Using Advanced Wafer-Level Packaging Technology

2006. 12

hynix Develops the World’s Fastest 200MHz 512Mb Mobile DRAM

2006. 12

hynix Develops the Industry’s first 60nm 1Gb DDR2 800MHz based Modules

2006. 03

hynix Semiconductor Secures the Industry’s First Intel Certification for 80nm DDR2 DRAM

2005. 12

hynix Develops the World’s Fastest and Highest Capacity Graphics Memory 512Mb GDDR4 DRAM

2005. 11

hynix Develops DRAM the Industry’s First JEDEC Standard 8GB DDR2 R-DIMMs

2005. 07

hynix First to Receive Intel Validation on High Density-High Speed 2GB DDR2-667 SODIMMs

2005. 06

hynix Semiconductor Secures the Industry’s First Certification for Fastest 1GB DDR2-800 Module

2005. 01

hynix Semiconductor Develops an x8-Based Server Memory Module with 30% Reduced Power Consumption

2004. 03

hynix Semiconductor Secures Intel Certification for 1Gb DDR2 SDRAM

2004. 03

hynix Semiconductor Begins Mass Producing DDR550

2004. 02

hynix Semiconductor Develops 512Mb NAND Memory

2003. 12

hynix Receives Intel Validation For Low Latency, High Performance 512Mb DDR2

2003. 08

hynix Develops DRAM the Industry’s First 1Gb DDR2

2003. 07

hynix Launches the World’s First Introduction of DDR500

2003. 06

hynix Receives Intel Validation for its 512 Mbit DDR400

2003. 05

hynix Launches Volume Production of Ultra-Low-Power 256 Mb SDRAM

2003. 05

Hynix Launches Production on its 0.10-micron Process Technology

2003. 03

hynix Develops the World’s First Commercially Applicable Mega-level FeRAM, a Major Industry Milestone

2003. 02

Hynix Rolls out 400MHz DDR to Coincide with Intel Springdale Launch

2003. 01

hynix Receives Validation from Intel for its 333Mbps High-speed 512Mb DDR SDRAM

2002. 10

hynix Develops 0.10-micron 512 Mb DDR

2002. 08

hynix Semiconductor Launches Ultra-High-Speed 256Mb DDR SDRAM for Graphics

2002. 06

hynix Develops High-Density, Wide-Bandwidth SDRAM for Consumer Applications

2002. 03

hynix Semiconductor Launches 1GB DDR DRAM Module

2002. 02

hynix Semiconductor Receives Approval from VIA for its 128MB and 256MB DDR SDRAM

2001. 12

hynix Launches the World’s Fastest 128-Mb DDR SDRAM

2001. 11

hynix Develops High-Capacity SRAM for Next-Generation Mobile Phones

2001. 11

hynix PC2700 DDR333 Module Validated by Leading Chipset Manufacturer, SILICON INTEGRATED SYSTEMS (SiS)

2001. 06

hynix Launches Low- and Super-Low Voltage Flash Memory Portfolio with New 32 Megabit Offerings New Flash Devices

2001. 05

hynix Semiconductor Develops 1M FeRAM

2001. 04

hynix Semiconductor Receives 288Mb RDRAM Validation from Rambus

2001. 04

hynix Semiconductor Extends Penetration of Graphics Market with Volume Production of New 4 Meg X 16 DDR SDRAM Device

2001. 03

hynix Semiconductor Develops New 8Mb Super Low Power SRAM

2001. 03

hynix Semiconductor Actively Supplies DDR SDRAM Modules to Major PC Makers

2001. 02

Hyundai Electronics Receives Validation from AMD and VIA for its 128MB and 256MB DDR SDRAM Unbuffered DIMM Modules

2001. 01

HEI Develops Ultra-High-Speed 512Mb DDR SDRAM

2000. 12

Hyundai Electronics Develops Micro Semiconductor Module for 256MB

2000. 04

Hyundai MicroElectronics Enters Low and Super Low Voltage Flash Memory Market

2000. 04

HEI Successfully Commercializes Ferroelectric Memory (FeRAM)

1999. 06

HEI Begins Mass Production of the World’s Fastest 16Mb SDRAM for Graphics

1998. 12

HEI Successfully Develops and Exports the World’s First Mass Production Technology for Photoresist for 4Gb DRAM

1998. 11

HEI Starts Commercial Production of the World's Fastest 128M SDRAMs

1998. 10

HEI Develops 4th-Generation 64Mb SDRAM

1998. 09

HEI Develops Next-Generation FeRAM

1998. 09

HEI Develops the World’s Smallest Direct RAMBUS DRAM Chip

1998. 09

HEI Develops 64Mb DDR SDRAM

1997. 11

HEI Develops the World’s First SyncLink DRAM Prototype

1997. 05

HEI Develops the World’s First 1Gb SDRAM Using SOI Technology

1995. 10

HEI Develops the World’s First 256Mb SRAM

1993. 08

HEI Develops 1Mb Fast SRAM

1993. 07

HEI Begins Pilot Production of 16Mb DRAM (FAB IV)

1992. 09

HEI Develops 64Mb DRAM

1992. 09

HEI Develops 2nd-Generation 16Mb DRAM

1992. 09

HEI Develops 64Mb DRAM Prototype under National Project

1991. 11

HEI Develops 1Mb Slow SRAM

1991. 04

HEI Begins Mass Production of 4Mb DRAM

1991. 03

HEI Develops 16Mb DRAM

1991. 02

HEI Develops 16Mb DRAM Prototype under National Project

1989. 09

HEI Develops 4Mb DRAM

1989. 08

HEI Develops 256K Fast SRAM

1988. 06

HEI Develops 256K Slow SRAM

1986. 09

HEI Jointly Develops 4Mb DRAM under National Project

1985. 12

HEI Begins Shipments of 16Kb SRAM

1985. 10

HEI Begins Full-Scale Mass Production of 256Kb DRAM

1985. 05

HEI Begins Mass Production of 64Kb DRAM

1985. 05

HEI Begins Mass Production of 16Kb SRAM

1984. 12

HEI Achieves Korea’s First Pilot Production of 16Kb SRAM

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